onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD9N60NTM FCD9N60NTM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015892-FCD9N60NTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 92.6W (Tc) Family Name: FCD9N60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 17.8nC @ 10V Max Input Capacitance: 1000pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 385 mOhm @ 4.5A, 10V Alternative Parts (Cross-Reference): STD10NM65N; STD11N65M5; STD12N60DM2AG; STD11N60DM2; Introduction Date: September 14, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD9N60NTM - 015892-FCD9N60NTM - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FCD9N60NTM - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FCD9N60NTMTR-ND - DigiKey
    DigiKey
  • Mosfet,n Channel,600V,9A,dpak; Channel Type Onsemi - 41T0481 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCD9N60NTM - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015892-FCD9N60NTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 92.6W (Tc) Family Name: FCD9N60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 17.8nC @ 10V Max Input Capacitance: 1000pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 385 mOhm @ 4.5A, 10V Alternative Parts (Cross-Reference): STD10NM65N; STD11N65M5; STD12N60DM2AG; STD11N60DM2; Introduction Date: September 14, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD9N60NTM - 015892-FCD9N60NTM - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD9N60NTM
015892-FCD9N60NTM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD9N60NTM 015892-FCD9N60NTM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015892-FCD9N60NTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 92.6W (Tc) Family Name: FCD9N60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 17.8nC @ 10V Max Input Capacitance: 1000pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 385 mOhm @ 4.5A, 10V Alternative Parts (Cross-Reference): STD10NM65N; STD11N65M5; STD12N60DM2AG; STD11N60DM2; Introduction Date: September 14, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015892-FCD9N60NTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 92.6W (Tc)
Family Name: FCD9N60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 17.8nC @ 10V
Max Input Capacitance: 1000pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 385 mOhm @ 4.5A, 10V
Alternative Parts (Cross-Reference): STD10NM65N; STD11N65M5; STD12N60DM2AG; STD11N60DM2;
Introduction Date: September 14, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FCD9N60NTM - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FCD9N60NTM
Single FETs, MOSFETs FCD9N60NTM
MOSFET N-CH 600V 9A DPAK

MOSFET N-CH 600V 9A DPAK

Supplier's Site Datasheet
Single FETs, MOSFETs - FCD9N60NTMTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCD9N60NTMTR-ND
Single FETs, MOSFETs FCD9N60NTMTR-ND
N-Channel 600V 9A (Tc) 92.6W (Tc) Surface Mount TO-252AA

N-Channel 600V 9A (Tc) 92.6W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Mosfet,n Channel,600V,9A,dpak; Channel Type Onsemi - 41T0481 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet,n Channel,600V,9A,dpak; Channel Type Onsemi
41T0481
Mosfet,n Channel,600V,9A,dpak; Channel Type Onsemi 41T0481
MOSFET,N CHANNEL,600V,9A,DPAK ; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Product Range:- RoHS Compliant: Yes

MOSFET,N CHANNEL,600V,9A,DPAK; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Product Range:- RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FCD9N60NTM
MOSFET FCD9N60NTM
MOSFET 600V N-Channel SupreMOS

MOSFET 600V N-Channel SupreMOS

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCD9N60NTM - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCD9N60NTM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCD9N60NTM
MOSFET N-CH 600V 9A DPAK

MOSFET N-CH 600V 9A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 015892-FCD9N60NTM FCD9N60NTM FCD9N60NTMTR-ND 41T0481 FCD9N60NTM FCD9N60NTM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD9N60NTM Single FETs, MOSFETs Single FETs, MOSFETs Mosfet,n Channel,600V,9A,dpak; Channel Type Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 600 volts 600 volts
PD 92600 milliwatts 92600 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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