onsemi Single FETs, MOSFETs FCD9N60NTM

MOSFET N-CH 600V 9A DPAK

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015892-FCD9N60NTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 92.6W (Tc)
Family Name: FCD9N60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 17.8nC @ 10V
Max Input Capacitance: 1000pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 385 mOhm @ 4.5A, 10V
Alternative Parts (Cross-Reference): STD10NM65N; STD11N65M5; STD12N60DM2AG; STD11N60DM2;
Introduction Date: September 14, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500

N-Channel 600V 9A (Tc) 92.6W (Tc) Surface Mount TO-252AA