onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD9N60NTM FCD9N60NTM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015892-FCD9N60NTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 92.6W (Tc) Family Name: FCD9N60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 17.8nC @ 10V Max Input Capacitance: 1000pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 385 mOhm @ 4.5A, 10V Alternative Parts (Cross-Reference): STD10NM65N; STD11N65M5; STD12N60DM2AG; STD11N60DM2; Introduction Date: September 14, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015892-FCD9N60NTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 92.6W (Tc) Family Name: FCD9N60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 17.8nC @ 10V Max Input Capacitance: 1000pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 385 mOhm @ 4.5A, 10V Alternative Parts (Cross-Reference): STD10NM65N; STD11N65M5; STD12N60DM2AG; STD11N60DM2; Introduction Date: September 14, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD9N60NTM - 015892-FCD9N60NTM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD9N60NTM
015892-FCD9N60NTM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD9N60NTM 015892-FCD9N60NTM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015892-FCD9N60NTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 92.6W (Tc) Family Name: FCD9N60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 17.8nC @ 10V Max Input Capacitance: 1000pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 385 mOhm @ 4.5A, 10V Alternative Parts (Cross-Reference): STD10NM65N; STD11N65M5; STD12N60DM2AG; STD11N60DM2; Introduction Date: September 14, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015892-FCD9N60NTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 92.6W (Tc)
Family Name: FCD9N60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 17.8nC @ 10V
Max Input Capacitance: 1000pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 385 mOhm @ 4.5A, 10V
Alternative Parts (Cross-Reference): STD10NM65N; STD11N65M5; STD12N60DM2AG; STD11N60DM2;
Introduction Date: September 14, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FCD9N60NTMTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCD9N60NTMTR-ND
Single FETs, MOSFETs FCD9N60NTMTR-ND
N-Channel 600V 9A (Tc) 92.6W (Tc) Surface Mount TO-252AA

N-Channel 600V 9A (Tc) 92.6W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Singapore, Singapore
N-Channel 600V 9A DPAK MOSFET Transistor
278-FCD9N60NTM
N-Channel 600V 9A DPAK MOSFET Transistor 278-FCD9N60NTM
600V 9A N-Channel Power MOSFET, DPAK, 385mΩ Product overview: FCD9N60NTM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 9A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 9A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCD9N60NTM can be used for catalog matching and distributor lookup.

600V 9A N-Channel Power MOSFET, DPAK, 385mΩ Product overview: FCD9N60NTM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 9A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 9A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCD9N60NTM can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet,n Channel,600V,9A,dpak; Channel Type Onsemi - 41T0481 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet,n Channel,600V,9A,dpak; Channel Type Onsemi
41T0481
Mosfet,n Channel,600V,9A,dpak; Channel Type Onsemi 41T0481
MOSFET,N CHANNEL,600V,9A,DPAK ; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Product Range:- RoHS Compliant: Yes

MOSFET,N CHANNEL,600V,9A,DPAK; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Product Range:- RoHS Compliant: Yes

Supplier's Site
Single FETs, MOSFETs - FCD9N60NTM - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FCD9N60NTM
Single FETs, MOSFETs FCD9N60NTM
MOSFET N-CH 600V 9A DPAK

MOSFET N-CH 600V 9A DPAK

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 600V N-Channel SupreMOS

MOSFET 600V N-Channel SupreMOS

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCD9N60NTM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCD9N60NTM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCD9N60NTM
MOSFET N-CH 600V 9A DPAK

MOSFET N-CH 600V 9A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 015892-FCD9N60NTM FCD9N60NTMTR-ND 278-FCD9N60NTM 41T0481 FCD9N60NTM FCD9N60NTM FCD9N60NTM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD9N60NTM Single FETs, MOSFETs N-Channel 600V 9A DPAK MOSFET Transistor Mosfet,n Channel,600V,9A,dpak; Channel Type Onsemi Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 600 volts 600 volts
PD 92600 milliwatts 92600 milliwatts 92600 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data

Similar Products

GaAs Fet Switches - KCB816 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 4000 MHz
View Details
DC - 12 GHz, 25 Watt, 32 Volt GaN RF Transistor - TGF2979-SM - Qorvo
Specs
Transistor Technology / Material DC - 12 GHz, 25 Watt, 32 Volt GaN RF Transistor
Package Type QFN
Power Gain 11 dB
View Details
3 suppliers