onsemi Single FETs, MOSFETs FCD9N60NTM

Description
MOSFET N-CH 600V 9A DPAK
Request a Quote Datasheet
Description
MOSFET N-CH 600V 9A DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FCD9N60NTM - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FCD9N60NTM
Single FETs, MOSFETs FCD9N60NTM
MOSFET N-CH 600V 9A DPAK

MOSFET N-CH 600V 9A DPAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD9N60NTM - 015892-FCD9N60NTM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD9N60NTM
015892-FCD9N60NTM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD9N60NTM 015892-FCD9N60NTM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015892-FCD9N60NTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 92.6W (Tc) Family Name: FCD9N60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 17.8nC @ 10V Max Input Capacitance: 1000pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 385 mOhm @ 4.5A, 10V Alternative Parts (Cross-Reference): STD10NM65N; STD11N65M5; STD12N60DM2AG; STD11N60DM2; Introduction Date: September 14, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015892-FCD9N60NTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 92.6W (Tc)
Family Name: FCD9N60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 17.8nC @ 10V
Max Input Capacitance: 1000pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 385 mOhm @ 4.5A, 10V
Alternative Parts (Cross-Reference): STD10NM65N; STD11N65M5; STD12N60DM2AG; STD11N60DM2;
Introduction Date: September 14, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FCD9N60NTMTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCD9N60NTMTR-ND
Single FETs, MOSFETs FCD9N60NTMTR-ND
N-Channel 600V 9A (Tc) 92.6W (Tc) Surface Mount TO-252AA

N-Channel 600V 9A (Tc) 92.6W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 600V N-Channel SupreMOS

MOSFET 600V N-Channel SupreMOS

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCD9N60NTM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCD9N60NTM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCD9N60NTM
MOSFET N-CH 600V 9A DPAK

MOSFET N-CH 600V 9A DPAK

Supplier's Site
Mosfet,n Channel,600V,9A,dpak; Channel Type Onsemi - 41T0481 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet,n Channel,600V,9A,dpak; Channel Type Onsemi
41T0481
Mosfet,n Channel,600V,9A,dpak; Channel Type Onsemi 41T0481
MOSFET,N CHANNEL,600V,9A,DPAK ; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Product Range:- RoHS Compliant: Yes

MOSFET,N CHANNEL,600V,9A,DPAK; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Product Range:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FCD9N60NTM 015892-FCD9N60NTM FCD9N60NTMTR-ND FCD9N60NTM FCD9N60NTM 41T0481
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD9N60NTM Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet,n Channel,600V,9A,dpak; Channel Type Onsemi
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts
IDSS 9000 milliamps 9000 milliamps
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