Manufacturer: ON Semiconductor
Win Source Part Number: 801881-FCD850N80Z
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800V
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Maximum): 75W (Tc)
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 850mOhm at 3A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 29nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 1315pF at 100V
Current - Continuous Drain (Id) at 25°C: 6A (Tc)
Vgs(th) (Maximum) at Id: 4.5V at 600μA
Maximum Vgs: ±20V
MOSFET N-CH 800V 6A DPAK
N-Channel 800V 6A (Tc) 75W (Tc) Surface Mount TO-252AA
MOSFET N-CH 800V 6A DPAK
N-Channel 800V 6A (Tc) 75W (Tc) Surface Mount TO-252AA
MOSFETs N-Channel SuperFET II MOSFET Product overview: FCD850N80Z from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FCD850N80Z can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 800V, 6A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.71ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power RoHS Compliant: Yes
MOSFET N-CH 800V 6A DPAK
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 801881-FCD850N80Z | FCD850N80Z | 488-FCD850N80ZCT-ND | 2088-FCD850N80Z | 46AC0752 | FCD850N80Z |
| Product Name | FETs - Single - FCD850N80Z | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel MOSFET Transistor | Mosfet, N-Ch, 800V, 6A, To-252-3; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Package Type | SOT3; TO-252 (DPAK) | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | Reel | TO-3; TO-252 (DPAK) | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Packing Method | Tape Reel; Reel | Reel | Tape Reel; Tape & Reel (TR),Cut Tape (CT) | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
