MOSFET N-CH 650V 6A DPAK
MOSFET N-CH 650V 6A DPAK
N-Channel 650V 6A (Tc) 54W (Tc) Surface Mount D-PAK (TO-252)
MOSFET N-CH 650V 6A DPAK
Win Source Part Number: 1209060-FCD600N65S3R
Category: Discrete Semiconductor Products>Transistors
Series: SuperFET® III
Package: Tape & Reel (TR)
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Power Dissipation (Max): 54W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252)
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 400 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Base Product Number: FCD600
Drive Voltage (Max Rds On, Min Rds On): 10V
Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 6 A, 600 mΩ, DPAK, 2500-REEL Product overview: FCD600N65S3R0 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 6 A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 6 A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCD600N65S3R0 can be used for catalog matching and distributor lookup.
MOSFET SUPERFET3 650V 10A 360 mOhm
MOSFET N-CH 650V 6A DPAK
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FCD600N65S3R0 | 488-FCD600N65S3R0CT-ND | 1209060-FCD600N65S3R0 | 278-FCD600N65S3R0 | FCD600N65S3R0 | FCD600N65S3R0 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | N-Channel 650 V 6 A DPAK MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 650 volts | |||||
| IDSS | 6000 milliamps |