MOSFETs 650V SUPERFET Product overview: FCD5N60TM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FCD5N60TM can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 110164-FCD5N60TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 54W (Tc)
Family Name: FCD5N60
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 4.6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 16nC @ 10V
Max Input Capacitance: 600pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 950 mOhm @ 2.3A, 10V
Alternative Parts (Cross-Reference): STD7NM64N; TSM6N60CP ROG; CDM4-600LR TR13; CDM4-600LR;
Introduction Date: September 14, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
MOSFET N-CH 600V 4.6A DPAK
N-Channel 600V 4.6A (Tc) 54W (Tc) Surface Mount TO-252AA
N-Channel 600V 4.6A (Tc) 54W (Tc) Surface Mount TO-252AA
N-Channel 600V 4.6A (Tc) 54W (Tc) Surface Mount TO-252AA
MOSFET N-CH 600V 4.6A DPAK
Trans MOSFET N-CH 600V 4.6A 3-Pin(2+Tab) DPAK T/R
MOSFET, N, 650V, D-PAK; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:4.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:54WRoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-FCD5N60TM | 110164-FCD5N60TM | FCD5N60TM | FCD5N60TMTR-ND | FCD5N60TM | 598-FCD5N60TM | 34M6098 | FCD5N60TM |
| Product Name | 650V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD5N60TM | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Trans MOSFET N-CH 600V 4.6A 3-Pin(2+Tab) DPAK T/R | Mosfet, N, 650V, D-Pak; Channel Type Onsemi | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||
| Transconductance | 0.0038 kS | |||||||
| PD | 54 milliwatts | 54000 milliwatts | 54000 milliwatts | 54000 milliwatts | 54000 milliwatts | |||
| Package Type | Reel | SOT3; TO-252 (DPAK); D-Pak | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 |
