MOSFET N-CH 600V 4.6A DPAK
N-Channel 600V 4.6A (Tc) 54W (Tc) Surface Mount TO-252AA
N-Channel 600V 4.6A (Tc) 54W (Tc) Surface Mount TO-252AA
N-Channel 600V 4.6A (Tc) 54W (Tc) Surface Mount TO-252AA
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 110164-FCD5N60TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 54W (Tc)
Family Name: FCD5N60
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 4.6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 16nC @ 10V
Max Input Capacitance: 600pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 950 mOhm @ 2.3A, 10V
Alternative Parts (Cross-Reference): STD7NM64N; TSM6N60CP ROG; CDM4-600LR TR13; CDM4-600LR;
Introduction Date: September 14, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
Trans MOSFET N-CH 600V 4.6A 3-Pin(2+Tab) DPAK T/R
MOSFET N-CH 600V 4.6A DPAK
MOSFET, N, 650V, D-PAK; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:4.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:54WRoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FCD5N60TM | FCD5N60TMTR-ND | 110164-FCD5N60TM | FCD5N60TM | 598-FCD5N60TM | FCD5N60TM | 34M6098 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD5N60TM | MOSFET | Trans MOSFET N-CH 600V 4.6A 3-Pin(2+Tab) DPAK T/R | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N, 650V, D-Pak; Channel Type Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||||
| V(BR)DSS | 600 volts | 600 volts | 600 volts | ||||
| IDSS | 4600 milliamps | 4600 milliamps | |||||
| PD | 54000 milliwatts | 54000 milliwatts | 54000 milliwatts | 54000 milliwatts |
