MOSFETs N-CH/600V/7A/ SuperFET Product overview: FCD4N60TM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 7A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FCD4N60TM can be used for catalog matching and distributor lookup.
N-Channel 600V 3.9A (Tc) 50W (Tc) Surface Mount TO-252AA
N-Channel 600V 3.9A (Tc) 50W (Tc) Surface Mount TO-252AA
N-Channel 600V 3.9A (Tc) 50W (Tc) Surface Mount TO-252AA
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 129098-FCD4N60TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 3.9A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 16.6nC @ 10V
Max Input Capacitance: 540pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500
MOSFET, N, 600V, D-PAK; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:3.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:50WRoHS Compliant: Yes
MOSFET, N-CH, 600V, 3.9A, 50W, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS Compliant: Yes
MOSFET N-CH 600V 3.9A DPAK
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 2088-FCD4N60TM | FCD4N60TMCT-ND | 129098-FCD4N60TM | FCD4N60TM | 34M6097 | 85AC1763 | FCD4N60TM |
| Product Name | 600V 7A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD4N60TM | MOSFET | Mosfet, N, 600V, D-Pak; Channel Type Onsemi | Mosfet, N-Ch, 600V, 3.9A, 50W, To-252; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| Transconductance | 0.0032 kS | ||||||
| PD | 50 milliwatts | 50000 milliwatts | 50000 milliwatts | ||||
| Package Type | Reel | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK); D-Pak | TO-3 | TO-3; TO-252 (DPAK) | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |
