onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD4N60TF FCD4N60TF

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 128535-FCD4N60TF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 3.9A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 16.6nC @ 10V
Max Input Capacitance: 540pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
Quantity per package: 2k pcs

MOSFET N-CH 600V 3.9A DPAK Product overview: FCD4N60TF from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 3.9A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 3.9A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCD4N60TF can be used for catalog matching and distributor lookup.

N-Channel 600V 3.9A (Tc) 50W (Tc) Surface Mount TO-252AA