MOSFET N-CH 600V 10.2A DPAK
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037871-FCD380N60E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 106W (Tc)
Family Name: FCD380N60E
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 10.2A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 1770pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 380 mOhm @ 5A, 10V
Alternative Parts (Cross-Reference): AOD11S60; IPD60R385CPX; TK10P60W,RVQ;
Introduction Date: January 01, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500
MOSFETs 600V N-Channel MOSFET Product overview: FCD380N60E from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FCD380N60E can be used for catalog matching and distributor lookup.
N-Channel 600V 10.2A (Tc) 106W (Tc) Surface Mount TO-252AA
N-Channel 600V 10.2A (Tc) 106W (Tc) Surface Mount TO-252AA
N-Channel 600V 10.2A (Tc) 106W (Tc) Surface Mount TO-252AA
MOSFET N-CH 600V 10.2A DPAK
MOSFET, N-CH, 600V, 10.2A, TO-252-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:10.2A; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V; Power Dissipation:106W; Qualification:- RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FCD380N60E | 1037871-FCD380N60E | 2088-FCD380N60E | FCD380N60EDKR-ND | FCD380N60E | FCD380N60E | 46AC0750 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD380N60E | N-Channel 600V MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 600V, 10.2A, To-252-3; Channel Type Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 600 volts | 600 volts | |||||
| IDSS | 10200 milliamps | 10200 milliamps | |||||
| PD | 106000 milliwatts | 106000 milliwatts | 106 milliwatts | 106000 milliwatts |
