onsemi Single FETs, MOSFETs FCD380N60E

Description
N-Channel 600V 10.2A (Tc) 106W (Tc) Surface Mount TO-252AA
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Description
N-Channel 600V 10.2A (Tc) 106W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FCD380N60EDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCD380N60EDKR-ND
Single FETs, MOSFETs FCD380N60EDKR-ND
N-Channel 600V 10.2A (Tc) 106W (Tc) Surface Mount TO-252AA

N-Channel 600V 10.2A (Tc) 106W (Tc) Surface Mount TO-252AA

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Single FETs, MOSFETs - FCD380N60ETR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCD380N60ETR-ND
Single FETs, MOSFETs FCD380N60ETR-ND
N-Channel 600V 10.2A (Tc) 106W (Tc) Surface Mount TO-252AA

N-Channel 600V 10.2A (Tc) 106W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - FCD380N60ECT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCD380N60ECT-ND
Single FETs, MOSFETs FCD380N60ECT-ND
N-Channel 600V 10.2A (Tc) 106W (Tc) Surface Mount TO-252AA

N-Channel 600V 10.2A (Tc) 106W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - FCD380N60E - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FCD380N60E
Single FETs, MOSFETs FCD380N60E
MOSFET N-CH 600V 10.2A DPAK

MOSFET N-CH 600V 10.2A DPAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD380N60E - 1037871-FCD380N60E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD380N60E
1037871-FCD380N60E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD380N60E 1037871-FCD380N60E
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037871-FCD380N60E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 106W (Tc) Family Name: FCD380N60E Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 10.2A (Tc) Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 1770pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 380 mOhm @ 5A, 10V Alternative Parts (Cross-Reference): AOD11S60; IPD60R385CPX; TK10P60W,RVQ; Introduction Date: January 01, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037871-FCD380N60E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 106W (Tc)
Family Name: FCD380N60E
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 10.2A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 1770pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 380 mOhm @ 5A, 10V
Alternative Parts (Cross-Reference): AOD11S60; IPD60R385CPX; TK10P60W,RVQ;
Introduction Date: January 01, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500

Buy Now Datasheet
Singapore
N-Channel 600V MOSFET Transistor
2088-FCD380N60E
N-Channel 600V MOSFET Transistor 2088-FCD380N60E
MOSFETs 600V N-Channel MOSFET Product overview: FCD380N60E from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FCD380N60E can be used for catalog matching and distributor lookup.

MOSFETs 600V N-Channel MOSFET Product overview: FCD380N60E from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FCD380N60E can be used for catalog matching and distributor lookup.

Supplier's Site
Mosfet, N-Ch, 600V, 10.2A, To-252-3; Channel Type Onsemi - 46AC0750 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 10.2A, To-252-3; Channel Type Onsemi
46AC0750
Mosfet, N-Ch, 600V, 10.2A, To-252-3; Channel Type Onsemi 46AC0750
MOSFET, N-CH, 600V, 10.2A, TO-252-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:10.2A; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V; Power Dissipation:106W; Qualification:- RoHS Compliant: Yes

MOSFET, N-CH, 600V, 10.2A, TO-252-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:10.2A; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V; Power Dissipation:106W; Qualification:- RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 600V N-Channel MOSFET

MOSFET 600V N-Channel MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCD380N60E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCD380N60E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCD380N60E
MOSFET N-CH 600V 10.2A DPAK

MOSFET N-CH 600V 10.2A DPAK

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FCD380N60EDKR-ND FCD380N60E 1037871-FCD380N60E 2088-FCD380N60E 46AC0750 FCD380N60E FCD380N60E
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD380N60E N-Channel 600V MOSFET Transistor Mosfet, N-Ch, 600V, 10.2A, To-252-3; Channel Type Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); D-Pak Reel TO-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts
IDSS 10200 milliamps 10200 milliamps
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