MOSFET N-CH 650V 10A DPAK
Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 10 A, 360 mΩ, DPAK, 2500-REEL Product overview: FCD360N65S3R0 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 10 A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 10 A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCD360N65S3R0 can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 871547-FCD360N65S3R0
Series: SuperFET® III
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 650 V 10A (Tc) 83W (Tc) Surface Mount D-PAK (TO-252)
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Package: Reel - TR
Mounting: Surface Mount
Family Name: FCD360
Categories: Discrete Semiconductor Products
Case / Package: D-PAK (TO-252)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
Quantity per package: 2500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: FCD360N65S3R0OSTR, FCD360N65S3R0-ND, FCD360N65S3R0OSCT, FCD360N65S3R0OSDKR
N-Channel 650V 10A (Tc) 83W (Tc) Surface Mount D-PAK (TO-252)
N-Channel 650V 10A (Tc) 83W (Tc) Surface Mount D-PAK (TO-252)
N-Channel 650V 10A (Tc) 83W (Tc) Surface Mount D-PAK (TO-252)
MOSFET, N-CH, 650V, 10A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.31ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power RoHS Compliant: Yes
MOSFET N-CH 650V 10A DPAK
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FCD360N65S3R0 | 278-FCD360N65S3R0 | 871547-FCD360N65S3R0 | FCD360N65S3R0OSTR-ND | 62AC6858 | FCD360N65S3R0 |
| Product Name | Single FETs, MOSFETs | N-Channel 650 V 10 A DPAK MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD360N65S3R0 | Single FETs, MOSFETs | Mosfet, N-Ch, 650V, 10A, To-252; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 650 volts | |||||
| IDSS | 10000 milliamps | 10000 milliamps | ||||
| PD | 83000 milliwatts |