N-Channel 650V 12A (Tc) 90W (Tc) Surface Mount TO-252AA
N-Channel 650V 12A (Tc) 90W (Tc) Surface Mount TO-252AA
N-Channel 650V 12A (Tc) 90W (Tc) Surface Mount TO-252AA
MOSFET N-CH 650V 12A TO252
Manufacturer: ON Semiconductor
Win Source Part Number: 801564-FCD260N65S3
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650V
Supplier Device Package: TO-252, (D-Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Maximum): 90W (Tc)
Popularity: High
Fake Threat In the Open Market: 75 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 260mOhm at 6A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 24nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 1010pF at 400V
Current - Continuous Drain (Id) at 25°C: 12A (Tc)
Vgs(th) (Maximum) at Id: 4.5V at 1.2mA
Maximum Vgs: ±30V
Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 12 A, 260 mΩ, DPAK N-Channel SuperFET� III MOSFET 650 V, 12 A, 260 m?, 2500-REEL Product overview: FCD260N65S3 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 12 A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 12 A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCD260N65S3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 650V 12A TO252
MOSFET, N-CH, 650V, 12A, 150DEG C, 90W ROHS COMPLIANT: YES
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 488-FCD260N65S3DKR-ND | FCD260N65S3 | 801564-FCD260N65S3 | 278-FCD260N65S3 | FCD260N65S3 | FCD260N65S3 | 54AH6221 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | FETs - Single - FCD260N65S3 | N-Channel 650 V 12 A DPAK MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 650V, 12A, 150Deg C, 90W Rohs Compliant Onsemi |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK) | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 650 volts |
