onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD2250N80Z FCD2250N80Z

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037870-FCD2250N80Z Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 39W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 2.6A (Tc) Gate-Source Threshold Voltage: 4.5V @ 260μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 585pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.25 Ohm @ 1.3A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited Quantity per package: 2,500
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD2250N80Z - 1037870-FCD2250N80Z - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FCD2250N80Z - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FCD2250N80ZDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FCD2250N80ZTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FCD2250N80ZCT-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCD2250N80Z - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 800V, 2.6A, 150Deg C, 39W Rohs Compliant Onsemi - 54AH8608 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037870-FCD2250N80Z Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 39W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 2.6A (Tc) Gate-Source Threshold Voltage: 4.5V @ 260μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 585pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.25 Ohm @ 1.3A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD2250N80Z - 1037870-FCD2250N80Z - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD2250N80Z
1037870-FCD2250N80Z
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD2250N80Z 1037870-FCD2250N80Z
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037870-FCD2250N80Z Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 39W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 2.6A (Tc) Gate-Source Threshold Voltage: 4.5V @ 260μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 585pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.25 Ohm @ 1.3A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037870-FCD2250N80Z
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 39W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 2.6A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 260μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 585pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.25 Ohm @ 1.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FCD2250N80Z - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FCD2250N80Z
Single FETs, MOSFETs FCD2250N80Z
MOSFET N-CH 800V 2.6A DPAK

MOSFET N-CH 800V 2.6A DPAK

Supplier's Site Datasheet
Single FETs, MOSFETs - FCD2250N80ZDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCD2250N80ZDKR-ND
Single FETs, MOSFETs FCD2250N80ZDKR-ND
N-Channel 800V 2.6A (Tc) 39W (Tc) Surface Mount TO-252AA

N-Channel 800V 2.6A (Tc) 39W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - FCD2250N80ZTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCD2250N80ZTR-ND
Single FETs, MOSFETs FCD2250N80ZTR-ND
N-Channel 800V 2.6A (Tc) 39W (Tc) Surface Mount TO-252AA

N-Channel 800V 2.6A (Tc) 39W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - FCD2250N80ZCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCD2250N80ZCT-ND
Single FETs, MOSFETs FCD2250N80ZCT-ND
N-Channel 800V 2.6A (Tc) 39W (Tc) Surface Mount TO-252AA

N-Channel 800V 2.6A (Tc) 39W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FCD2250N80Z
MOSFET FCD2250N80Z
MOSFET SF2 800V 2.25OHM E DPAK

MOSFET SF2 800V 2.25OHM E DPAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCD2250N80Z - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCD2250N80Z
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCD2250N80Z
MOSFET N-CH 800V 2.6A DPAK

MOSFET N-CH 800V 2.6A DPAK

Supplier's Site
Mosfet, N-Ch, 800V, 2.6A, 150Deg C, 39W Rohs Compliant Onsemi - 54AH8608 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 800V, 2.6A, 150Deg C, 39W Rohs Compliant Onsemi
54AH8608
Mosfet, N-Ch, 800V, 2.6A, 150Deg C, 39W Rohs Compliant Onsemi 54AH8608
MOSFET, N-CH, 800V, 2.6A, 150DEG C, 39W ROHS COMPLIANT: YES

MOSFET, N-CH, 800V, 2.6A, 150DEG C, 39W ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1037870-FCD2250N80Z FCD2250N80Z FCD2250N80ZDKR-ND FCD2250N80Z FCD2250N80Z 54AH8608
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD2250N80Z Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 800V, 2.6A, 150Deg C, 39W Rohs Compliant Onsemi
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 800 volts 800 volts
PD 39000 milliwatts 39000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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