Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037870-FCD2250N80Z
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 39W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 2.6A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 260μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 585pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.25 Ohm @ 1.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500
MOSFETs N-Channel SuperFET II MOSFET 800 V, 2.6 A, 2.25 O Product overview: FCD2250N80Z from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800 V, 2.6 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800 V, 2.6 A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FCD2250N80Z can be used for catalog matching and distributor lookup.
N-Channel 800V 2.6A (Tc) 39W (Tc) Surface Mount TO-252AA
N-Channel 800V 2.6A (Tc) 39W (Tc) Surface Mount TO-252AA
N-Channel 800V 2.6A (Tc) 39W (Tc) Surface Mount TO-252AA
MOSFET N-CH 800V 2.6A DPAK
MOSFET, N-CH, 800V, 2.6A, 150DEG C, 39W ROHS COMPLIANT: YES
MOSFET N-CH 800V 2.6A DPAK
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1037870-FCD2250N80Z | 2088-FCD2250N80Z | FCD2250N80ZDKR-ND | FCD2250N80Z | FCD2250N80Z | 54AH8608 | FCD2250N80Z |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD2250N80Z | N-Channel 800 V 2.6 A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 800V, 2.6A, 150Deg C, 39W Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 800 volts | 800 volts | |||||
| PD | 39000 milliwatts | 39 milliwatts | 39000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; TO-252 (DPAK); D-Pak | Reel | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |
