onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD2250N80Z FCD2250N80Z

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037870-FCD2250N80Z Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 39W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 2.6A (Tc) Gate-Source Threshold Voltage: 4.5V @ 260μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 585pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.25 Ohm @ 1.3A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited Quantity per package: 2,500
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD2250N80Z - 1037870-FCD2250N80Z - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FCD2250N80ZDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FCD2250N80ZTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FCD2250N80ZCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FCD2250N80Z - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Mosfet, N-Ch, 800V, 2.6A, 150Deg C, 39W Rohs Compliant Onsemi - 54AH8608 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCD2250N80Z - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037870-FCD2250N80Z Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 39W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 2.6A (Tc) Gate-Source Threshold Voltage: 4.5V @ 260μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 585pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.25 Ohm @ 1.3A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD2250N80Z - 1037870-FCD2250N80Z - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD2250N80Z
1037870-FCD2250N80Z
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD2250N80Z 1037870-FCD2250N80Z
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037870-FCD2250N80Z Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 39W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 2.6A (Tc) Gate-Source Threshold Voltage: 4.5V @ 260μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 585pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.25 Ohm @ 1.3A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037870-FCD2250N80Z
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 39W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 2.6A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 260μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 585pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.25 Ohm @ 1.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FCD2250N80ZDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCD2250N80ZDKR-ND
Single FETs, MOSFETs FCD2250N80ZDKR-ND
N-Channel 800V 2.6A (Tc) 39W (Tc) Surface Mount TO-252AA

N-Channel 800V 2.6A (Tc) 39W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - FCD2250N80ZTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCD2250N80ZTR-ND
Single FETs, MOSFETs FCD2250N80ZTR-ND
N-Channel 800V 2.6A (Tc) 39W (Tc) Surface Mount TO-252AA

N-Channel 800V 2.6A (Tc) 39W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - FCD2250N80ZCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCD2250N80ZCT-ND
Single FETs, MOSFETs FCD2250N80ZCT-ND
N-Channel 800V 2.6A (Tc) 39W (Tc) Surface Mount TO-252AA

N-Channel 800V 2.6A (Tc) 39W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - FCD2250N80Z - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FCD2250N80Z
Single FETs, MOSFETs FCD2250N80Z
MOSFET N-CH 800V 2.6A DPAK

MOSFET N-CH 800V 2.6A DPAK

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FCD2250N80Z
MOSFET FCD2250N80Z
MOSFET SF2 800V 2.25OHM E DPAK

MOSFET SF2 800V 2.25OHM E DPAK

Buy Now Datasheet
Mosfet, N-Ch, 800V, 2.6A, 150Deg C, 39W Rohs Compliant Onsemi - 54AH8608 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 800V, 2.6A, 150Deg C, 39W Rohs Compliant Onsemi
54AH8608
Mosfet, N-Ch, 800V, 2.6A, 150Deg C, 39W Rohs Compliant Onsemi 54AH8608
MOSFET, N-CH, 800V, 2.6A, 150DEG C, 39W ROHS COMPLIANT: YES

MOSFET, N-CH, 800V, 2.6A, 150DEG C, 39W ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCD2250N80Z - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCD2250N80Z
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCD2250N80Z
MOSFET N-CH 800V 2.6A DPAK

MOSFET N-CH 800V 2.6A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1037870-FCD2250N80Z FCD2250N80ZDKR-ND FCD2250N80Z FCD2250N80Z 54AH8608 FCD2250N80Z
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCD2250N80Z Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Mosfet, N-Ch, 800V, 2.6A, 150Deg C, 39W Rohs Compliant Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 800 volts 800 volts
PD 39000 milliwatts 39000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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