onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCB36N60NTM FCB36N60NTM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 134914-FCB36N60NTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 312W (Tc) Family Name: FCB36N60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 36A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 112nC @ 10V Max Input Capacitance: 4785pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 90 mOhm @ 18A, 10V Alternative Parts (Cross-Reference): STB35N65M5; STB50N65DM6; STB36NM60ND; STB38N65M5; Introduction Date: September 14, 2004 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Quantity per package: 800
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCB36N60NTM - 134914-FCB36N60NTM - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FCB36N60NTMTR-ND - DigiKey
    DigiKey
  • MOSFET N-CH 600V 36A D2PAK - 598-FCB36N60NTM - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCB36N60NTM - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet,n Ch,600V,36A,d2Pak; Transistor Polarity Onsemi - 41T0480 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, N Channel, 600V, 0.081Ohm, 36A, To-263-3; Transistor Polarity Onsemi - 85W3133 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 134914-FCB36N60NTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 312W (Tc) Family Name: FCB36N60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 36A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 112nC @ 10V Max Input Capacitance: 4785pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 90 mOhm @ 18A, 10V Alternative Parts (Cross-Reference): STB35N65M5; STB50N65DM6; STB36NM60ND; STB38N65M5; Introduction Date: September 14, 2004 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCB36N60NTM - 134914-FCB36N60NTM - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCB36N60NTM
134914-FCB36N60NTM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCB36N60NTM 134914-FCB36N60NTM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 134914-FCB36N60NTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 312W (Tc) Family Name: FCB36N60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 36A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 112nC @ 10V Max Input Capacitance: 4785pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 90 mOhm @ 18A, 10V Alternative Parts (Cross-Reference): STB35N65M5; STB50N65DM6; STB36NM60ND; STB38N65M5; Introduction Date: September 14, 2004 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 134914-FCB36N60NTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 312W (Tc)
Family Name: FCB36N60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 36A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 112nC @ 10V
Max Input Capacitance: 4785pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 90 mOhm @ 18A, 10V
Alternative Parts (Cross-Reference): STB35N65M5; STB50N65DM6; STB36NM60ND; STB38N65M5;
Introduction Date: September 14, 2004
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - FCB36N60NTMTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCB36N60NTMTR-ND
Single FETs, MOSFETs FCB36N60NTMTR-ND
N-Channel 600V 36A (Tc) 312W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600V 36A (Tc) 312W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 600V 36A MOSFET Transistor
278-FCB36N60NTM
N-Channel 600V 36A MOSFET Transistor 278-FCB36N60NTM
600V 36A N-Channel Power MOSFET, 90mR, D2PAK Product overview: FCB36N60NTM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 36A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 36A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCB36N60NTM can be used for catalog matching and distributor lookup.

600V 36A N-Channel Power MOSFET, 90mR, D2PAK Product overview: FCB36N60NTM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 36A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 36A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCB36N60NTM can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FCB36N60NTM
MOSFET FCB36N60NTM
MOSFET 600V NChannel MOSFET SupreMOST

MOSFET 600V NChannel MOSFET SupreMOST

Buy Now Datasheet
MOSFET N-CH 600V 36A D2PAK - 598-FCB36N60NTM - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 600V 36A D2PAK
598-FCB36N60NTM
MOSFET N-CH 600V 36A D2PAK 598-FCB36N60NTM
MOSFET N-CH 600V 36A D2PAK

MOSFET N-CH 600V 36A D2PAK

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCB36N60NTM - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCB36N60NTM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCB36N60NTM
MOSFET N-CH 600V 36A D2PAK

MOSFET N-CH 600V 36A D2PAK

Supplier's Site
Mosfet,n Ch,600V,36A,d2Pak; Transistor Polarity Onsemi - 41T0480 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet,n Ch,600V,36A,d2Pak; Transistor Polarity Onsemi
41T0480
Mosfet,n Ch,600V,36A,d2Pak; Transistor Polarity Onsemi 41T0480
MOSFET,N CH,600V,36A,D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.081ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:312W; No. of Pins:3 RoHS Compliant: Yes

MOSFET,N CH,600V,36A,D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.081ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:312W; No. of Pins:3 RoHS Compliant: Yes

Supplier's Site
Mosfet, N Channel, 600V, 0.081Ohm, 36A, To-263-3; Transistor Polarity Onsemi - 85W3133 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 600V, 0.081Ohm, 36A, To-263-3; Transistor Polarity Onsemi
85W3133
Mosfet, N Channel, 600V, 0.081Ohm, 36A, To-263-3; Transistor Polarity Onsemi 85W3133
MOSFET, N CHANNEL, 600V, 0.081OHM, 36A, TO-263-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:36A; On Resistance Rds(on):0.081ohm; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes

MOSFET, N CHANNEL, 600V, 0.081OHM, 36A, TO-263-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:36A; On Resistance Rds(on):0.081ohm; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 134914-FCB36N60NTM FCB36N60NTMTR-ND 278-FCB36N60NTM FCB36N60NTM 598-FCB36N60NTM FCB36N60NTM 41T0480 85W3133
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCB36N60NTM Single FETs, MOSFETs N-Channel 600V 36A MOSFET Transistor MOSFET MOSFET N-CH 600V 36A D2PAK Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet,n Ch,600V,36A,d2Pak; Transistor Polarity Onsemi Mosfet, N Channel, 600V, 0.081Ohm, 36A, To-263-3; Transistor Polarity Onsemi
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 600 volts 600 volts
PD 312000 milliwatts 312000 milliwatts 312000 milliwatts 312000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Package Type TO-263; SOT3; D2PAK (TO-263AB) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3 TO-3; TO-263
Unlock Full Specs
to access all available technical data