Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 134914-FCB36N60NTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 312W (Tc)
Family Name: FCB36N60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 36A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 112nC @ 10V
Max Input Capacitance: 4785pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 90 mOhm @ 18A, 10V
Alternative Parts (Cross-Reference): STB35N65M5; STB50N65DM6; STB36NM60ND; STB38N65M5;
Introduction Date: September 14, 2004
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Quantity per package: 800
N-Channel 600V 36A (Tc) 312W (Tc) Surface Mount D²PAK (TO-263)
MOSFET 600V NChannel MOSFET SupreMOST
MOSFET N-CH 600V 36A D2PAK
MOSFET,N CH,600V,36A,D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.081ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:312W; No. of Pins:3 RoHS Compliant: Yes
MOSFET, N CHANNEL, 600V, 0.081OHM, 36A, TO-263-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:36A; On Resistance Rds(on):0.081ohm; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes
MOSFET N-CH 600V 36A D2PAK
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 134914-FCB36N60NTM | FCB36N60NTMTR-ND | FCB36N60NTM | 598-FCB36N60NTM | 41T0480 | 85W3133 | FCB36N60NTM |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCB36N60NTM | Single FETs, MOSFETs | MOSFET | MOSFET N-CH 600V 36A D2PAK | Mosfet,n Ch,600V,36A,d2Pak; Transistor Polarity Onsemi | Mosfet, N Channel, 600V, 0.081Ohm, 36A, To-263-3; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 600 volts | 600 volts | |||||
| PD | 312000 milliwatts | 312000 milliwatts | 312000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | TO-263; SOT3; D2PAK (TO-263AB) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3 | TO-3; TO-263 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
