onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCB20N60TM FCB20N60TM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015891-FCB20N60TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 208W (Tc) Family Name: FCB20N60 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 98nC @ 10V Max Input Capacitance: 3080pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 190 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): TSM60NB190CM2 RNG; TK16G60W; SiHB22N60S-GE3 ; STB24N60M2; Introduction Date: February 04, 2005 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Quantity per package: 800
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015891-FCB20N60TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 208W (Tc) Family Name: FCB20N60 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 98nC @ 10V Max Input Capacitance: 3080pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 190 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): TSM60NB190CM2 RNG; TK16G60W; SiHB22N60S-GE3 ; STB24N60M2; Introduction Date: February 04, 2005 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCB20N60TM - 015891-FCB20N60TM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCB20N60TM
015891-FCB20N60TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCB20N60TM 015891-FCB20N60TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015891-FCB20N60TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 208W (Tc) Family Name: FCB20N60 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 98nC @ 10V Max Input Capacitance: 3080pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 190 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): TSM60NB190CM2 RNG; TK16G60W; SiHB22N60S-GE3 ; STB24N60M2; Introduction Date: February 04, 2005 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015891-FCB20N60TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 208W (Tc)
Family Name: FCB20N60
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 98nC @ 10V
Max Input Capacitance: 3080pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 190 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): TSM60NB190CM2 RNG; TK16G60W; SiHB22N60S-GE3 ; STB24N60M2;
Introduction Date: February 04, 2005
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
Quantity per package: 800

Buy Now Datasheet
MOSFETs - 6710330 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
6710330
MOSFETs 6710330
MOSFET N-Channel 600V 20A D2PAK

MOSFET N-Channel 600V 20A D2PAK

Supplier's Site
MOSFETs - 6710330P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
6710330P
MOSFETs 6710330P
MOSFET N-Channel 600V 20A D2PAK

MOSFET N-Channel 600V 20A D2PAK

Supplier's Site
MOSFETs - 1661748 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1661748
MOSFETs 1661748
MOSFET N-Channel 600V 20A D2PAK

MOSFET N-Channel 600V 20A D2PAK

Supplier's Site
Single FETs, MOSFETs - FCB20N60TMDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCB20N60TMDKR-ND
Single FETs, MOSFETs FCB20N60TMDKR-ND
N-Channel 600V 20A (Tc) 208W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600V 20A (Tc) 208W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FCB20N60TMTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCB20N60TMTR-ND
Single FETs, MOSFETs FCB20N60TMTR-ND
N-Channel 600V 20A (Tc) 208W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600V 20A (Tc) 208W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FCB20N60TMCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCB20N60TMCT-ND
Single FETs, MOSFETs FCB20N60TMCT-ND
N-Channel 600V 20A (Tc) 208W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600V 20A (Tc) 208W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Mosfet, N Ch, 600V, 20A, To-263; Transistor Polarity Onsemi - 88T3229 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 600V, 20A, To-263; Transistor Polarity Onsemi
88T3229
Mosfet, N Ch, 600V, 20A, To-263; Transistor Polarity Onsemi 88T3229
MOSFET, N CH, 600V, 20A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation RoHS Compliant: Yes

MOSFET, N CH, 600V, 20A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCB20N60TM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCB20N60TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCB20N60TM
MOSFET N-CH 600V 20A D2PAK

MOSFET N-CH 600V 20A D2PAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET HIGH POWER

MOSFET HIGH POWER

Buy Now Datasheet

Technical Specifications

  Win Source Electronics RS Components, Ltd. RS Components, Ltd. DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 015891-FCB20N60TM 6710330 6710330P FCB20N60TMDKR-ND 88T3229 FCB20N60TM FCB20N60TM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCB20N60TM MOSFETs MOSFETs Single FETs, MOSFETs Mosfet, N Ch, 600V, 20A, To-263; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 600 volts
PD 208000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
Package Type TO-263; SOT3; D2PAK (TO-263AB) TO-263; D2pak (to-263) TO-263; TO-263 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3; TO-263 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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