MOSFETs 600V NCH FRFET Product overview: FCB20N60FTM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FCB20N60FTM can be used for catalog matching and distributor lookup.
N-Channel 600V 20A (Tc) 208W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 20A (Tc) 208W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 20A (Tc) 208W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037865-FCB20N60FTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 208W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 98nC @ 10V
Max Input Capacitance: 3080pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 190 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient
Quantity per package: 800
N CHANNEL MOSFET, 600V, 20A, D2-PAK; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes
N CHANNEL MOSFET, 600V, 20A, D2-PAK; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes
MOSFET N-CH 600V 20A D2PAK
MOSFET N-CH 600V 20A D2PAK
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-FCB20N60FTM | FCB20N60FTMDKR-ND | 1037865-FCB20N60FTM | 20M1150 | FCB20N60FTM | FCB20N60FTM | FCB20N60FTM |
| Product Name | 600V MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCB20N60FTM | N Channel Mosfet, 600V, 20A, D2-Pak; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| MOSFET Operating Mode | Enhancement | ||||||
| Transconductance | 0.0170 kS | ||||||
| PD | 208 milliwatts | 208000 milliwatts | 208000 milliwatts | ||||
| Package Type | Reel | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK (TO-263AB) | TO-3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
