onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCB20N60F_F085 FCB20N60F_F085

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037867-FCB20N60F_F0 85 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 405W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 102nC @ 10V Max Input Capacitance: 2035pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 195 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): SIHB22N60S-E3; IPB60R199CPXT; FCB20N60F_F085; SPB20N60S5 E3045A; Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037867-FCB20N60F_F0 85 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 405W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 102nC @ 10V Max Input Capacitance: 2035pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 195 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): SIHB22N60S-E3; IPB60R199CPXT; FCB20N60F_F085; SPB20N60S5 E3045A; Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Sufficient
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCB20N60F_F085 - 1037867-FCB20N60F_F085 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCB20N60F_F085
1037867-FCB20N60F_F085
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCB20N60F_F085 1037867-FCB20N60F_F085
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037867-FCB20N60F_F0 85 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 405W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 102nC @ 10V Max Input Capacitance: 2035pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 195 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): SIHB22N60S-E3; IPB60R199CPXT; FCB20N60F_F085; SPB20N60S5 E3045A; Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037867-FCB20N60F_F085
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 405W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 102nC @ 10V
Max Input Capacitance: 2035pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 195 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): SIHB22N60S-E3; IPB60R199CPXT; FCB20N60F_F085; SPB20N60S5 E3045A;
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
600V 20A MOSFET Transistor
285-FCB20N60F_F085
600V 20A MOSFET Transistor 285-FCB20N60F_F085
MOSFET N CH 600V 20A TO-263AB Product overview: FCB20N60F_F085 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FCB20N60F_F085 can be used for catalog matching and distributor lookup.

MOSFET N CH 600V 20A TO-263AB Product overview: FCB20N60F_F085 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FCB20N60F_F085 can be used for catalog matching and distributor lookup.

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1037867-FCB20N60F_F085 285-FCB20N60F_F085
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCB20N60F_F085 600V 20A MOSFET Transistor
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts
PD 405000 milliwatts 405000 milliwatts
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