MOSFETs HIGH POWER Product overview: FCB11N60TM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FCB11N60TM can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 130034-FCB11N60TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Family Name: FCB11N60
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 52nC @ 10V
Max Input Capacitance: 1490pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 380 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): STB11NM60FD; STB11NM60; R6010MNJTL; STB11NM60FDT4;
Introduction Date: February 04, 2005
ECCN: EAR99
Country of Origin: Malaysia, China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Quantity per package: 800
N-Channel 600V 11A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 11A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 11A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)
N CHANNEL MOSFET, 600V, 11A, D2-PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5VRoHS Compliant: Yes
MOSFET N-CH 600V 11A D2PAK
| RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 6710337 | 6710337P | 2088-FCB11N60TM | 130034-FCB11N60TM | FCB11N60TMTR-ND | 31K6744 | FCB11N60TM | FCB11N60TM |
| Product Name | MOSFETs | MOSFETs | MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCB11N60TM | Single FETs, MOSFETs | N Channel Mosfet, 600V, 11A, D2-Pak, Full Reel; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||
| Package Type | TO-263; D2pak (to-263) | TO-263; TO-263 | Reel | TO-263; SOT3; D2PAK (TO-263AB) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | |
| Number of units in IC | 1 | |||||||
| PD | 125 milliwatts | 125000 milliwatts |
