onsemi Single FETs, MOSFETs FCB11N60FTM

Description
N-Channel 600V 11A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet
Description
N-Channel 600V 11A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FCB11N60FTMTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCB11N60FTMTR-ND
Single FETs, MOSFETs FCB11N60FTMTR-ND
N-Channel 600V 11A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600V 11A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCB11N60FTM - 1173552-FCB11N60FTM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCB11N60FTM
1173552-FCB11N60FTM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCB11N60FTM 1173552-FCB11N60FTM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1173552-FCB11N60FTM Series: SuperFET Packaging: Reel - TR Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Part Status: Obsolete(EOL) Family Name: FCB11N60F Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: D2PAK (TO-263AB) Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1490pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 125W (Tc) Rds On (Maximum) @ Id, Vgs: 380 mOhm @ 5.5A, 10V Alternative Parts (Cross-Reference): IPB60R30C6; STB11NM60FDT4; STB11NM60FD; Introduction Date: February 04, 2005 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1173552-FCB11N60FTM
Series: SuperFET
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Part Status: Obsolete(EOL)
Family Name: FCB11N60F
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: D2PAK (TO-263AB)
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 52nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1490pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 125W (Tc)
Rds On (Maximum) @ Id, Vgs: 380 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): IPB60R30C6; STB11NM60FDT4; STB11NM60FD;
Introduction Date: February 04, 2005
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCB11N60FTM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCB11N60FTM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCB11N60FTM
MOSFET N-CH 600V 11A D2PAK

MOSFET N-CH 600V 11A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FCB11N60FTMTR-ND 1173552-FCB11N60FTM FCB11N60FTM
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCB11N60FTM Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
Unlock Full Specs
to access all available technical data