Manufacturer: ON Semiconductor
Win Source Part Number: 730898-FCB110N65F
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 357W
Popularity: Low
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 35A
Rds On (Maximum) at Id, Vgs: 110mOhm at 17.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 3.5mA
Gate Charge (Qg) (Maximum) at Vgs: 145nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 4895pF at 100V
N-Channel 650V 35A (Tc) 357W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 650V 35A (Tc) 357W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 650V 35A (Tc) 357W (Tc) Surface Mount D²PAK (TO-263)
MOSFETs Power MOSFET, N-Channel, SUPERFE II, FRFET®, 650 V, 35 A, 110 mohm, D2-PAK Product overview: FCB110N65F from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 35 A, 110 mohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 35 A, 110 mohm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FCB110N65F can be used for catalog matching and distributor lookup.
MOSFET N-CH 650V 35A D2PAK
MOSFET, N-CH, 650V, 35A, 150DEG C, 357W ROHS COMPLIANT: YES
MOSFET N-CH 650V 35A D2PAK
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 730898-FCB110N65F | FCB110N65FCT-ND | 2088-FCB110N65F | FCB110N65F | FCB110N65F | 54AH3036 | FCB110N65F |
| Product Name | FETs - Single - FCB110N65F | Single FETs, MOSFETs | N-Channel 650 V 35 A 110 mohm MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 650V, 35A, 150Deg C, 357W Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 650 volts | 650 volts | |||||
| PD | 357000 milliwatts | 357 milliwatts | 357000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | TO-263; SOT3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Reel | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
