onsemi Single FETs, MOSFETs FCB110N65F

MOSFET N-CH 650V 35A D2PAK

MOSFETs Power MOSFET, N-Channel, SUPERFE II, FRFET®, 650 V, 35 A, 110 mohm, D2-PAK Product overview: FCB110N65F from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 35 A, 110 mohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 35 A, 110 mohm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FCB110N65F can be used for catalog matching and distributor lookup.

N-Channel 650V 35A (Tc) 357W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 650V 35A (Tc) 357W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 650V 35A (Tc) 357W (Tc) Surface Mount D²PAK (TO-263)

Manufacturer: ON Semiconductor
Win Source Part Number: 730898-FCB110N65F
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 357W
Popularity: Low
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 35A
Rds On (Maximum) at Id, Vgs: 110mOhm at 17.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 3.5mA
Gate Charge (Qg) (Maximum) at Vgs: 145nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 4895pF at 100V