onsemi Single FETs, MOSFETs FCB070N65S3

The FCB070N65S3 is a high-voltage N-channel MOSFET from the SuperFET III series, designed for power applications. It features a maximum drain-to-source voltage (VDSS) of 650 V and a continuous drain current (ID) rating of 44 A at a case temperature of 25¬8C. The device exhibits a low on-resistance (RDS(on)) of 70 mOc at a gate-source voltage (VGS) of 10 V, which contributes to reduced conduction losses and improved efficiency in power conversion applications. This MOSFET is characterized by an ultra-low total gate charge (Qg) of 78 nC, allowing for faster switching performance. It is avalanche rated and has been tested for reliability under extreme conditions. The device operates effectively within a temperature range of -55¬8C to +150¬8C and is packaged in a D2-PAK (TO-263) format, suitable for surface mount applications. Applications for the FCB070N65S3 include telecom and server power supplies, industrial power supplies, and uninterruptible power supplies (UPS) as well as solar energy systems. The product is RoHS compliant and lead-free, making it suitable for environmentally conscious designs.