The FCB070N65S3 is a high-voltage N-channel MOSFET from the SuperFET III series, designed for power applications. It features a maximum drain-to-source voltage (VDSS) of 650 V and a continuous drain current (ID) rating of 44 A at a case temperature of 25¬8C. The device exhibits a low on-resistance (RDS(on)) of 70 mOc at a gate-source voltage (VGS) of 10 V, which contributes to reduced conduction losses and improved efficiency in power conversion applications. This MOSFET is characterized by an ultra-low total gate charge (Qg) of 78 nC, allowing for faster switching performance. It is avalanche rated and has been tested for reliability under extreme conditions. The device operates effectively within a temperature range of -55¬8C to +150¬8C and is packaged in a D2-PAK (TO-263) format, suitable for surface mount applications. Applications for the FCB070N65S3 include telecom and server power supplies, industrial power supplies, and uninterruptible power supplies (UPS) as well as solar energy systems. The product is RoHS compliant and lead-free, making it suitable for environmentally conscious designs.
N-Channel 650V 44A (Tc) 312W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 650V 44A (Tc) 312W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 650V 44A (Tc) 312W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer: ON Semiconductor
Win Source Part Number: 852325-FCB070N65S3
Series: SuperFET® III
Features: 650 V
Package: Reel - TR
Family Name: FCB070
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
Quantity per package: 800
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: FCB070N65S3TR, FCB070N65S3DKR, FCB070N65S3-ND, FCB070N65S3CT
MOSFET N-CH 650V 44A D2PAK
MOSFET, N-CH, 650V, 44A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.062ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power RoHS Compliant: Yes
MOSFET N-CH 650V 44A D2PAK
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FCB070N65S3TR-ND | 852325-FCB070N65S3 | FCB070N65S3 | 84Y5809 | FCB070N65S3 | FCB070N65S3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCB070N65S3 | Single FETs, MOSFETs | Mosfet, N-Ch, 650V, 44A, To-263-3; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | SOT3 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3; TO-263 | 10V | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 650 volts | |||||
| IDSS | 44000 milliamps | 44000 milliamps |
