The FCB070N65S3 is a high-voltage N-channel MOSFET from the SuperFET III series, designed for power applications. It features a maximum drain-to-source voltage (VDSS) of 650 V and a continuous drain current (ID) rating of 44 A at a case temperature of 25¬8C. The device exhibits a low on-resistance (RDS(on)) of 70 mOc at a gate-source voltage (VGS) of 10 V, which contributes to reduced conduction losses and improved efficiency in power conversion applications. This MOSFET is characterized by an ultra-low total gate charge (Qg) of 78 nC, allowing for faster switching performance. It is avalanche rated and has been tested for reliability under extreme conditions. The device operates effectively within a temperature range of -55¬8C to +150¬8C and is packaged in a D2-PAK (TO-263) format, suitable for surface mount applications. Applications for the FCB070N65S3 include telecom and server power supplies, industrial power supplies, and uninterruptible power supplies (UPS) as well as solar energy systems. The product is RoHS compliant and lead-free, making it suitable for environmentally conscious designs.
N-Channel 650V 44A (Tc) 312W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 650V 44A (Tc) 312W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 650V 44A (Tc) 312W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer: ON Semiconductor
Win Source Part Number: 852325-FCB070N65S3
Series: SuperFET® III
Features: 650 V
Package: Reel - TR
Family Name: FCB070
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
Quantity per package: 800
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: FCB070N65S3TR, FCB070N65S3DKR, FCB070N65S3-ND, FCB070N65S3CT
MOSFETs SuperFET3 650V 70mOhm Product overview: FCB070N65S3 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 70mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 70mOhm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FCB070N65S3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 650V 44A D2PAK
MOSFET N-CH 650V 44A D2PAK
MOSFET, N-CH, 650V, 44A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.062ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FCB070N65S3TR-ND | 852325-FCB070N65S3 | 2088-FCB070N65S3 | FCB070N65S3 | FCB070N65S3 | FCB070N65S3 | 84Y5809 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCB070N65S3 | 650V 70mOhm MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 650V, 44A, To-263-3; Transistor Polarity Onsemi |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | SOT3 | Reel | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 10V | TO-3; TO-263 | |
| MOSFET Operating Mode | Enhancement | ||||||
| Transconductance | 0.0290 kS | ||||||
| PD | 312 milliwatts | 312000 milliwatts |
