onsemi Single FETs, MOSFETs FCB070N65S3

Description
N-Channel 650V 44A (Tc) 312W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote
Description
N-Channel 650V 44A (Tc) 312W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The FCB070N65S3 is a high-voltage N-channel MOSFET from the SuperFET III series, designed for power applications. It features a maximum drain-to-source voltage (VDSS) of 650 V and a continuous drain current (ID) rating of 44 A at a case temperature of 25¬8C. The device exhibits a low on-resistance (RDS(on)) of 70 mOc at a gate-source voltage (VGS) of 10 V, which contributes to reduced conduction losses and improved efficiency in power conversion applications. This MOSFET is characterized by an ultra-low total gate charge (Qg) of 78 nC, allowing for faster switching performance. It is avalanche rated and has been tested for reliability under extreme conditions. The device operates effectively within a temperature range of -55¬8C to +150¬8C and is packaged in a D2-PAK (TO-263) format, suitable for surface mount applications. Applications for the FCB070N65S3 include telecom and server power supplies, industrial power supplies, and uninterruptible power supplies (UPS) as well as solar energy systems. The product is RoHS compliant and lead-free, making it suitable for environmentally conscious designs.

Datasheet Summary
Powered by GS/AI

The FCB070N65S3 is a high-voltage N-channel MOSFET from the SuperFET III series, designed for power applications. It features a maximum drain-to-source voltage (VDSS) of 650 V and a continuous drain current (ID) rating of 44 A at a case temperature of 25¬8C. The device exhibits a low on-resistance (RDS(on)) of 70 mOc at a gate-source voltage (VGS) of 10 V, which contributes to reduced conduction losses and improved efficiency in power conversion applications. This MOSFET is characterized by an ultra-low total gate charge (Qg) of 78 nC, allowing for faster switching performance. It is avalanche rated and has been tested for reliability under extreme conditions. The device operates effectively within a temperature range of -55¬8C to +150¬8C and is packaged in a D2-PAK (TO-263) format, suitable for surface mount applications. Applications for the FCB070N65S3 include telecom and server power supplies, industrial power supplies, and uninterruptible power supplies (UPS) as well as solar energy systems. The product is RoHS compliant and lead-free, making it suitable for environmentally conscious designs.

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FCB070N65S3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCB070N65S3TR-ND
Single FETs, MOSFETs FCB070N65S3TR-ND
N-Channel 650V 44A (Tc) 312W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 650V 44A (Tc) 312W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FCB070N65S3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCB070N65S3DKR-ND
Single FETs, MOSFETs FCB070N65S3DKR-ND
N-Channel 650V 44A (Tc) 312W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 650V 44A (Tc) 312W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FCB070N65S3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCB070N65S3CT-ND
Single FETs, MOSFETs FCB070N65S3CT-ND
N-Channel 650V 44A (Tc) 312W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 650V 44A (Tc) 312W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCB070N65S3 - 852325-FCB070N65S3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCB070N65S3
852325-FCB070N65S3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCB070N65S3 852325-FCB070N65S3
Manufacturer: ON Semiconductor Win Source Part Number: 852325-FCB070N65S3 Series: SuperFET® III Features: 650 V Package: Reel - TR Family Name: FCB070 Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited Quantity per package: 800 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 51 Weeks REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: FCB070N65S3TR, FCB070N65S3DKR, FCB070N65S3-ND, FCB070N65S3CT

Manufacturer: ON Semiconductor
Win Source Part Number: 852325-FCB070N65S3
Series: SuperFET® III
Features: 650 V
Package: Reel - TR
Family Name: FCB070
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
Quantity per package: 800
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: FCB070N65S3TR, FCB070N65S3DKR, FCB070N65S3-ND, FCB070N65S3CT

Buy Now Datasheet
Single FETs, MOSFETs - FCB070N65S3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FCB070N65S3
Single FETs, MOSFETs FCB070N65S3
MOSFET N-CH 650V 44A D2PAK

MOSFET N-CH 650V 44A D2PAK

Supplier's Site Datasheet
Mosfet, N-Ch, 650V, 44A, To-263-3; Transistor Polarity Onsemi - 84Y5809 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 44A, To-263-3; Transistor Polarity Onsemi
84Y5809
Mosfet, N-Ch, 650V, 44A, To-263-3; Transistor Polarity Onsemi 84Y5809
MOSFET, N-CH, 650V, 44A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.062ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power RoHS Compliant: Yes

MOSFET, N-CH, 650V, 44A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.062ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCB070N65S3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCB070N65S3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCB070N65S3
MOSFET N-CH 650V 44A D2PAK

MOSFET N-CH 650V 44A D2PAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET SuperFET3 650V 70mOhm

MOSFET SuperFET3 650V 70mOhm

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FCB070N65S3TR-ND 852325-FCB070N65S3 FCB070N65S3 84Y5809 FCB070N65S3 FCB070N65S3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCB070N65S3 Single FETs, MOSFETs Mosfet, N-Ch, 650V, 44A, To-263-3; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB SOT3 TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-3; TO-263 10V
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 650 volts
IDSS 44000 milliamps 44000 milliamps
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRF1404STRL - 769348-AUIRF1404STRL - Win Source Electronics
Specs
PD 3800 to 200000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
Package Type TO-263; SOT3
View Details
6 suppliers
Single FETs, MOSFETs - UJ3C120070K3S - ODG (Origin Data Global)
Specs
Polarity N-Channel; N-Channel
Transistor Technology / Material SiCFET (Cascode SiCJFET)
V(BR)DSS 1200 volts
View Details
3 suppliers
GaAs Fet Switches - KS201 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 4000 MHz
View Details