onsemi Single FETs, MOSFETs FCA47N60

Description
MOSFET N-CH 600V 47A TO3PN
Request a Quote Datasheet
Description
MOSFET N-CH 600V 47A TO3PN
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FCA47N60 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FCA47N60
Single FETs, MOSFETs FCA47N60
MOSFET N-CH 600V 47A TO3PN

MOSFET N-CH 600V 47A TO3PN

Supplier's Site Datasheet
Single FETs, MOSFETs - FCA47N60-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCA47N60-ND
Single FETs, MOSFETs FCA47N60-ND
N-Channel 600V 47A (Tc) 417W (Tc) Through Hole TO-3PN

N-Channel 600V 47A (Tc) 417W (Tc) Through Hole TO-3PN

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCA47N60 - 015889-FCA47N60 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCA47N60
015889-FCA47N60
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCA47N60 015889-FCA47N60
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015889-FCA47N60 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 417W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 47A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 270nC @ 10V Max Input Capacitance: 8000pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 73 mOhm @ 23.5A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015889-FCA47N60
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 417W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 47A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 270nC @ 10V
Max Input Capacitance: 8000pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 73 mOhm @ 23.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
Quantity per package: 450

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET
FCA47N60
MOSFET FCA47N60
MOSFET 650V SUPER FET

MOSFET 650V SUPER FET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCA47N60 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCA47N60
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCA47N60
MOSFET N-CH 600V 47A TO3PN

MOSFET N-CH 600V 47A TO3PN

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FCA47N60 FCA47N60-ND 015889-FCA47N60 FCA47N60 FCA47N60
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCA47N60 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts
IDSS 47000 milliamps
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2SB860-E - 855129-2SB860-E - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg.Power, 50 Volt, GaN RF Power Transistor - TGF2819-FL - Qorvo
Specs
Transistor Technology / Material DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg.Power, 50 Volt, GaN RF Power Transistor
Transistor Grade / Operating Range Military
Package Type NI-360
View Details
2 suppliers
Single FETs, MOSFETs - AUIRF5210S-ND - DigiKey
Infineon Technologies AG
Specs
Polarity P-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Transistor Grade / Operating Range Automotive
View Details
3 suppliers