onsemi Single FETs, MOSFETs FCA47N60

Description
MOSFET N-CH 600V 47A TO3PN
Request a Quote Datasheet
Description
MOSFET N-CH 600V 47A TO3PN
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FCA47N60 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FCA47N60
Single FETs, MOSFETs FCA47N60
MOSFET N-CH 600V 47A TO3PN

MOSFET N-CH 600V 47A TO3PN

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCA47N60 - 015889-FCA47N60 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCA47N60
015889-FCA47N60
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCA47N60 015889-FCA47N60
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015889-FCA47N60 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 417W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 47A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 270nC @ 10V Max Input Capacitance: 8000pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 73 mOhm @ 23.5A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015889-FCA47N60
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 417W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 47A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 270nC @ 10V
Max Input Capacitance: 8000pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 73 mOhm @ 23.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
Quantity per package: 450

Buy Now Datasheet
Single FETs, MOSFETs - FCA47N60-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FCA47N60-ND
Single FETs, MOSFETs FCA47N60-ND
N-Channel 600V 47A (Tc) 417W (Tc) Through Hole TO-3PN

N-Channel 600V 47A (Tc) 417W (Tc) Through Hole TO-3PN

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCA47N60 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCA47N60
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCA47N60
MOSFET N-CH 600V 47A TO3PN

MOSFET N-CH 600V 47A TO3PN

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FCA47N60
MOSFET FCA47N60
MOSFET 650V SUPER FET

MOSFET 650V SUPER FET

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FCA47N60 015889-FCA47N60 FCA47N60-ND FCA47N60 FCA47N60
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCA47N60 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts
IDSS 47000 milliamps
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