onsemi Single FETs, MOSFETs FCA35N60

N-Channel 600V 35A (Tc) 312.5W (Tc) Through Hole TO-3PN

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1037860-FCA35N60
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 312.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 181nC @ 10V
Max Input Capacitance: 6640pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 98 mOhm @ 17.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Sufficient
Quantity per package: 450

600V 35A N-Channel Power MOSFET, 79mR Rds(on), TO-3P Product overview: FCA35N60 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCA35N60 can be used for catalog matching and distributor lookup.