N-Channel 600V 22A (Tc) 205W (Tc) Through Hole TO-3PN
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204060-FCA22N60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 205W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 22A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 1950pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 165 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
Quantity per package: 450
MOSFET N-CH 600V 22A TO3PN
MOSFET Transistor; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:22A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:205W RoHS Compliant: Yes
| DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FCA22N60NOS-ND | 204060-FCA22N60N | FCA22N60N | FCA22N60N | 64R2976 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCA22N60N | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor; Channel Type Onsemi |
| Polarity | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-3; TO-3P-3, SC-65-3 | TO-3; SOT3; TO-3PN | TO-3P-3, SC-65-3 | TO-3 | |
| V(BR)DSS | 600 volts | ||||
| PD | 205000 milliwatts | 205000 milliwatts |
