onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCA16N60N FCA16N60N

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015888-FCA16N60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 134.4W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 52.3nC @ 10V Max Input Capacitance: 2170pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 199 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited Quantity per package: 450
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCA16N60N - 015888-FCA16N60N - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 488-FCA16N60N-ND - DigiKey
    DigiKey
  • Mosfet Transistor; Channel Type Onsemi - 64R2975 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCA16N60N - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015888-FCA16N60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 134.4W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 52.3nC @ 10V Max Input Capacitance: 2170pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 199 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited Quantity per package: 450
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCA16N60N - 015888-FCA16N60N - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCA16N60N
015888-FCA16N60N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCA16N60N 015888-FCA16N60N
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015888-FCA16N60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 134.4W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 52.3nC @ 10V Max Input Capacitance: 2170pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 199 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015888-FCA16N60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 134.4W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 52.3nC @ 10V
Max Input Capacitance: 2170pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 199 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
Quantity per package: 450

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 600V 16A MOSFET Transistor
278-FCA16N60N
N-Channel 600V 16A MOSFET Transistor 278-FCA16N60N
600V 16A N-Channel Power MOSFET, 199mR RdsOn, TO-3P Product overview: FCA16N60N from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 16A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCA16N60N can be used for catalog matching and distributor lookup.

600V 16A N-Channel Power MOSFET, 199mR RdsOn, TO-3P Product overview: FCA16N60N from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 16A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FCA16N60N can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 488-FCA16N60N-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-FCA16N60N-ND
Single FETs, MOSFETs 488-FCA16N60N-ND
MOSFET N-CH 600V TO-3PN

MOSFET N-CH 600V TO-3PN

Buy Now Datasheet
Mosfet Transistor; Channel Type Onsemi - 64R2975 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor; Channel Type Onsemi
64R2975
Mosfet Transistor; Channel Type Onsemi 64R2975
MOSFET Transistor; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:16A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:134.4W RoHS Compliant: Yes

MOSFET Transistor; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:16A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:134.4W RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FCA16N60N - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FCA16N60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FCA16N60N
MOSFET N-CH 600V TO-3PN

MOSFET N-CH 600V TO-3PN

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FCA16N60N
MOSFET FCA16N60N
MOSFET SupreMOS 16A

MOSFET SupreMOS 16A

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 015888-FCA16N60N 278-FCA16N60N 488-FCA16N60N-ND 64R2975 FCA16N60N FCA16N60N
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCA16N60N N-Channel 600V 16A MOSFET Transistor Single FETs, MOSFETs Mosfet Transistor; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 600 volts
PD 134400 milliwatts 134400 milliwatts 134400 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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