onsemi TRANSISTORS - Transistors (BJT) - Single - F44H11G F44H11G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 204018-F44H11G Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 50MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220FP Maximum Current Collector: 10A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 1V @ 400mA, 8A Collector Cut-off Current(Max): 1μA Typical Gain (hFE) (Min): 40 @ 4A, 1V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 204018-F44H11G Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 50MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220FP Maximum Current Collector: 10A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 1V @ 400mA, 8A Collector Cut-off Current(Max): 1μA Typical Gain (hFE) (Min): 40 @ 4A, 1V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - F44H11G - 204018-F44H11G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - F44H11G
204018-F44H11G
TRANSISTORS - Transistors (BJT) - Single - F44H11G 204018-F44H11G
Manufacturer: ON Semiconductor Win Source Part Number: 204018-F44H11G Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 50MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220FP Maximum Current Collector: 10A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 1V @ 400mA, 8A Collector Cut-off Current(Max): 1μA Typical Gain (hFE) (Min): 40 @ 4A, 1V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 204018-F44H11G
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 50MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220FP
Maximum Current Collector: 10A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 1V @ 400mA, 8A
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 40 @ 4A, 1V
Maximum Power Dissipation: 2W
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 204018-F44H11G
Product Name TRANSISTORS - Transistors (BJT) - Single - F44H11G
Polarity NPN; NPN
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2SA1317T - 855026-2SA1317T - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
502A IGBT MODULE FOR ONE PHASE 600/690V - SK-H1-QOUT-E502 - Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details
20 V, 2 A NPN medium power transistors - BC68PA-QX - Nexperia B.V.
Specs
Package Type SOT1061
View Details
4 suppliers