Enhancement mode gallium nitride (GaN) HEMT transistor with a 100 V drain-to-source voltage rating, 3.8 mΩ typical on-resistance, and 147 A continuous drain current at 25 °C case temperature. Packaged in a PDSO-N8 surface-mount case measuring 5.00 × 6.00 × 0.87 mm with a 1.27 mm pitch. Features ultra-low gate charge of 5.7 nC and a figure of merit of 21.7 nC·mΩ. Pb-free, halogen-free, and RoHS compliant. Junction-to-case thermal resistance is 0.6 °C/W. Designed for high-density power modules, high-frequency DC-DC converters, synchronous rectifiers, and motor drivers.
GAN FET 100V, 3.8M, 5X6 LGA
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 488-ENGNTLEF5D0N10GN1TXG-ND |
| Product Name | Single FETs, MOSFETs |
