The ENGNTLEF1D0N10GN1TXG is a 100 V enhancement mode GaN HEMT transistor in a PDSO-N8 package measuring 5.00x6.00x0.87 mm with a 1.27 mm pitch, designed for high-density power modules, high-frequency DC-DC converters, synchronous rectifiers, and motor drivers. It has a typical on-resistance of 0.8 mΩ at 5 V gate voltage and 70 A drain current, a total gate charge of 39 nC, and a gate-to-source voltage rating of -4 to 6 V. The device is RoHS compliant, Pb-free, and halide-free, with a maximum operating junction temperature of 150 °C and a maximum soldering temperature of 260 °C.
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The ENGNTLEF1D0N10GN1TXG is a 100 V enhancement mode GaN HEMT transistor in a PDSO-N8 package measuring 5.00x6.00x0.87 mm with a 1.27 mm pitch, designed for high-density power modules, high-frequency DC-DC converters, synchronous rectifiers, and motor drivers. It has a typical on-resistance of 0.8 mΩ at 5 V gate voltage and 70 A drain current, a total gate charge of 39 nC, and a gate-to-source voltage rating of -4 to 6 V. The device is RoHS compliant, Pb-free, and halide-free, with a maximum operating junction temperature of 150 °C and a maximum soldering temperature of 260 °C.
