Dual NPN Bipolar Digital Transistor (BRT), SOT-553, 5 LEAD, 4000-REEL Product overview: EMG2DXV5T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-EMG2DXV5T1G can be used for catalog matching and distributor lookup.
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 230mW Surface Mount SOT-553
Manufacturer: ON Semiconductor
Win Source Part Number: 040149-EMG2DXV5T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SOT-553
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 5mA, 10V
Maximum Power Dissipation: 230mW
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
TRANS 2NPN PREBIAS 0.23W SOT553
TRANS 2NPN PREBIAS 0.23W SOT553
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 293-EMG2DXV5T1G | EMG2DXV5T1G-ND | 040149-EMG2DXV5T1G | EMG2DXV5T1G | EMG2DXV5T1G |
| Product Name | Dual Bipolar Transistor | Bipolar Transistor Arrays, Pre-Biased | TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMG2DXV5T1G | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistor Arrays, Pre-Biased |
| Polarity | NPN | NPN | NPN; 2 NPN - Pre-Biased (Dual) | 2 NPN - Pre-Biased (Dual); NPN | |
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | ||
| VCEO | 50 volts | 50 volts | 50 volts | ||
| PD | 230 milliwatts |
