onsemi Bipolar Transistor Arrays, Pre-Biased EMF5XV6T5G

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 12V 100mA, 500mA 500mW Surface Mount SOT-563

Complementary Bipolar Digital Transistor (BRT), SOT-563, 6 LEAD, 8000-REEL Product overview: EMF5XV6T5G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-EMF5XV6T5G can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 1036323-EMF5XV6T5G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 1 NPN Pre-Biased, 1 PNP
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-563
Maximum Current Collector: 100mA, 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V, 12V
Max Vce (sat): 250mV @ 300μA, 10mA / 250mV @ 10mA, 200mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 5mA, 10V / 270 @ 10mA, 2V
Maximum Power Dissipation: 500mW
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon