NPN/PNP BJT, 50V, 100mA, SOT-563, Tape & Reel Product overview: EMD4DXV6T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-EMD4DXV6T1G can be used for catalog matching and distributor lookup.
Complementary Bipolar Digital Transistor (BRT)
Manufacturer: ON Semiconductor
Win Source Part Number: 1171914-EMD4DXV6T1G
Packaging: Reel - TR
Package: SOT-563, SOT-666
Mounting: SMD
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Family Name: EMD4DXV6
Resistor - Base (R1) (Ohms): 47k, 10k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: SOT-563
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 50V
Vce Saturation (Maximum) @ Ib, Ic: 250mV @ 300μA, 10mA
Current - Collector Cutoff (Maximum): 500nA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 80 @ 5mA, 10V
Alternative Parts (Cross-Reference): DCX144EH-13; UP04313; UP0439000L;
Introduction Date: April 15, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
Bipolar Transistors - Pre-Biased Dual Complementary NPN & PNP Digital
TRANS PREBIAS NPN/PNP 50V SOT563
BRT TRANSISTOR, 50V, 47K/10KOHM, SOT-553; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; RF Transistor Case:-; MSL:- RoHS Compliant: Yes
TRANS, AEC-Q101, NPN/PNP, 50V, SOT-563; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors |
| Product Number | 293-EMD4DXV6T1G | EMD4DXV6T1G | 1171914-EMD4DXV6T1G | EMD4DXV6T1GOSCT-ND | EMD4DXV6T1G | EMD4DXV6T1G | 41K9763 | 13AC3388 |
| Product Name | 50V 100mA Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMD4DXV6T1G | Bipolar Transistor Arrays, Pre-Biased | Bipolar Transistors - Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Brt Transistor, 50V, 47K/10Kohm, Sot-553; Digital Transistor Polarity Onsemi | Trans, Aec-Q101, Npn/pnp, 50V, Sot-563; Digital Transistor Polarity Onsemi | |
| Polarity | NPN; PNP | NPN; PNP | NPN; PNP | NPN; PNP | ||||
| IC(max) | 100 milliamps | 100 milliamps | ||||||
| VCEO | 50 volts | 50 volts | ||||||
| PD | 500 milliwatts | |||||||
| TJ | -55 C (-67 F) |
