onsemi Bipolar Transistor EMC2DXV5T1G

Description
Complementary Bipolar Digital Transistor (BRT)
Request a Quote Datasheet
Description
Complementary Bipolar Digital Transistor (BRT)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - EMC2DXV5T1G - Rochester Electronics
Newburyport, MA, United States
Complementary Bipolar Digital Transistor (BRT)

Complementary Bipolar Digital Transistor (BRT)

Supplier's Site Datasheet
Bipolar Transistor 293-EMC2DXV5T1G
Complementary Bipolar Digital Transistor (BRT), SOT-553, 5 LEAD, 4000-REEL Product overview: EMC2DXV5T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-EMC2DXV5T1G can be used for catalog matching and distributor lookup.

Complementary Bipolar Digital Transistor (BRT), SOT-553, 5 LEAD, 4000-REEL Product overview: EMC2DXV5T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-EMC2DXV5T1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMC2DXV5T1G - 1036316-EMC2DXV5T1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMC2DXV5T1G
1036316-EMC2DXV5T1G
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMC2DXV5T1G 1036316-EMC2DXV5T1G
Manufacturer: ON Semiconductor Win Source Part Number: 1036316-EMC2DXV5T1G Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Status: Active Case / Package: SOT-553 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 60 @ 5mA, 10V Maximum Power Dissipation: 500mW Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 1036316-EMC2DXV5T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-553
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 60 @ 5mA, 10V
Maximum Power Dissipation: 500mW
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - EMC2DXV5T1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
EMC2DXV5T1GOSTR-ND
Bipolar Transistor Arrays, Pre-Biased EMC2DXV5T1GOSTR-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-553

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-553

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - EMC2DXV5T1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
EMC2DXV5T1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) EMC2DXV5T1G
TRANS PREBIAS NPN/PNP 50V SOT553

TRANS PREBIAS NPN/PNP 50V SOT553

Supplier's Site

Technical Specifications

  Rochester Electronics ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors
Product Number EMC2DXV5T1G 293-EMC2DXV5T1G 1036316-EMC2DXV5T1G EMC2DXV5T1GOSTR-ND EMC2DXV5T1G
Product Name Bipolar Transistor TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMC2DXV5T1G Bipolar Transistor Arrays, Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Package Type SOT-553, 5 LEAD SOT3; SOT-553 SOT-553
Packing Method Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR)
Polarity NPN; PNP NPN; PNP; 1 NPN, 1 PNP - Pre-Biased (Dual) NPN; PNP
IC(max) 100 milliamps 100 milliamps
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