Manufacturer: ON Semiconductor
Win Source Part Number: 1035902-EFC6612R-A-T
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate, 2.5V Drive
Categories: Discrete Semiconductor Products
Case / Package: 6-CSP (1.77x3.54)
Maximum Power Dissipation: 2.5W
Max Gate Charge: 27nC @ 4.5V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 20V 23A EFCP
MOSFET 2N-CH 6CSP Product overview: EFC6612R-A-TF from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-EFC6612R-A-TF can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 6CSP
| Win Source Electronics | Rochester Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1035902-EFC6612R-A-TF | EFC6612R-A-TF | 289-EFC6612R-A-TF | EFC6612R-A-TF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - EFC6612R-A-TF | MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel |
