Complementary Dual Power MOSFET 60V, SOT-28FL / ECH8, 3000-REEL Product overview: ECH8690-TL-H from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 60V, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-ECH8690-TL-H can be used for catalog matching and distributor lookup.
Mosfet Array N and P-Channel 60V 4.7A, 3.5A 1.5W Surface Mount 8-ECH
Mosfet Array N and P-Channel 60V 4.7A, 3.5A 1.5W Surface Mount 8-ECH
Mosfet Array N and P-Channel 60V 4.7A, 3.5A 1.5W Surface Mount 8-ECH
Win Source Part Number: 1378345-ECH8690-TL-H
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Temperature Range - Operating: 150°C (TJ)
Fake Threat In the Open Market: 48 pct.
MSL Level: 1 (Unlimited)
Mfr: onsemi
Package: Tape & Reel
Product Status: Active
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH
Base Product Number: ECH8690
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.5A
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 20V
FET Feature: Logic Level Gate, 4V Drive
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Power - Max: 1.5W
Configuration: N and P-Channel
MOSFET, N & P-CH, 60V, 4.7A, ECH-8; Transistor Polarity:Complementa
MOSFET, N & P-CH, 60V, 4.7A, ECH-8; Transistor Polarity:N and P Complement; Continuous Drain Current Id:4.7A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Power RoHS Compliant: Yes
MOSFET N/P-CH 60V ECH8
MOSFET N/P-CH 60V 4.7A/3.5A 8ECH
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 289-ECH8690-TL-H | ECH8690-TL-HOSCT-ND | 1378345-ECH8690-TL-H | ECH8690-TL-H | 42AC1719 | ECH8690-TL-H | ECH8690-TL-H |
| Product Name | Dual 60V MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays | MOSFET | Mosfet, N & P-Ch, 60V, 4.7A, Ech-8; Transistor Polarity Onsemi | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | 8-SMD, Flat Leads | SOT3 | TO-3 | 8-SMD, Flat Lead | 8-SMD, Flat Lead | ||
| Polarity | P-Channel | P-Channel; N and P-Channel | |||||
| TJ | 150 C (302 F) | 150 C (302 F) | |||||
| IDSS | 4700 milliamps | 4700 milliamps |
