Manufacturer: ON Semiconductor
Win Source Part Number: 080875-ECH8657
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-ECH
Maximum Power Dissipation: 1.5W
Drain-Source Breakdown Voltage: 35V
Continuous Drain Current at 25°C: 4.5A
Max Gate Charge: 4.5nC @ 10V
Max Input Capacitance: 230pF @ 20V
Maximum Rds On at Id,Vgs: 59 mOhm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 35V 4.5A ECH8 Product overview: ECH8657 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 35V, 4.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 35V, 4.5A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-ECH8657 can be used for catalog matching and distributor lookup.
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 080875-ECH8657 | 285-ECH8657 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - ECH8657 | 35V 4.5A MOSFET Transistor |
| Polarity | N-Channel | |
| V(BR)DSS | 35 volts | |
| PD | 1500 milliwatts | 1500 milliwatts |