Manufacturer: ON Semiconductor
Win Source Part Number: 203510-ECH8651R-TL-H
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-ECH
Maximum Power Dissipation: 1.5W
Drain-Source Breakdown Voltage: 24V
Continuous Drain Current at 25°C: 10A
Max Gate Charge: 24nC @ 10V
Maximum Rds On at Id,Vgs: 14 mOhm @ 5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient
MOSFET 2N-CH 24V 10A 8ECH Product overview: ECH8651R-TL-HX from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 24V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 24V, 10A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-ECH8651R-TL-HX can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 24V 10A 8ECH
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 203510-ECH8651R-TL-HX | 289-ECH8651R-TL-HX | ECH8651R-TL-HX |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - ECH8651R-TL-HX | 24V 10A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | ||
| V(BR)DSS | 24 volts | ||
| PD | 1500 milliwatts |
