onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - ECH8619-TL-E ECH8619-TL-E

Manufacturer: ON Semiconductor
Win Source Part Number: 123087-ECH8619-TL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-ECH
Maximum Power Dissipation: 1.5W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 3A, 2A
Max Gate Charge: 12.8nC @ 10V
Max Input Capacitance: 560pF @ 20V
Maximum Rds On at Id,Vgs: 93 mOhm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

Mosfet Array N and P-Channel 60V 3A, 2A 1.5W Surface Mount 8-ECH

MOSFET N/P-CH 60V 3A/2A ECH8 Product overview: ECH8619-TL-E from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3A, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 3A, 2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-ECH8619-TL-E can be used for catalog matching and distributor lookup.