Manufacturer: ON Semiconductor
Win Source Part Number: 121871-ECH8601M-TL-H
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate, 2.5V Drive
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-ECH
Drain-Source Breakdown Voltage: 24V
Continuous Drain Current at 25°C: 8A (Ta)
Gate-Source Threshold Voltage: 1.3V @ 1mA
Max Gate Charge: 7.5nC @ 4.5V
Maximum Rds On at Id,Vgs: 23 mOhm @ 4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
N-Channel Power MOSFET, 24V, 8A, 23mΩ, Dual ECH8, SOT-28FL / ECH8, 3000-REEL Product overview: ECH8601M-TL-H from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 24V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 24V, 8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-ECH8601M-TL-H can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 24V 8A 8ECH
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 121871-ECH8601M-TL-H | 289-ECH8601M-TL-H | ECH8601M-TL-H |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - ECH8601M-TL-H | N-Channel Dual 24V 8A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel |
