onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - ECH8410 ECH8410

Description
Manufacturer: ON Semiconductor Win Source Part Number: 080868-ECH8410 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Temperature Range - Operating: 150°C (TJ) Case / Package: 8-ECH Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12A (Ta) Max Gate Charge: 31nC @ 10V Max Input Capacitance: 1700pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 080868-ECH8410 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Temperature Range - Operating: 150°C (TJ) Case / Package: 8-ECH Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12A (Ta) Max Gate Charge: 31nC @ 10V Max Input Capacitance: 1700pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ECH8410 - 080868-ECH8410 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ECH8410
080868-ECH8410
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ECH8410 080868-ECH8410
Manufacturer: ON Semiconductor Win Source Part Number: 080868-ECH8410 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Temperature Range - Operating: 150°C (TJ) Case / Package: 8-ECH Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12A (Ta) Max Gate Charge: 31nC @ 10V Max Input Capacitance: 1700pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 080868-ECH8410
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-ECH
Dimension: 8-SMD, Flat Lead
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A (Ta)
Max Gate Charge: 31nC @ 10V
Max Input Capacitance: 1700pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 080868-ECH8410
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - ECH8410
Polarity N-Channel; N-Channel
V(BR)DSS 30 volts
PD 1600 milliwatts
Unlock Full Specs
to access all available technical data