onsemi P-Channel -12V -9.5A MOSFET Transistor ECH8309-TL-H

P-Channel Power MOSFET -12V, -9.5A, 16mΩ, SOT-28FL / ECH8, 3000-REEL Product overview: ECH8309-TL-H from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -12V, -9.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -12V, -9.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ECH8309-TL-H can be used for catalog matching and distributor lookup.

P-Channel 12V 9.5A (Ta) 1.5W (Ta) Surface Mount 8-ECH

MOSFET P-CH 12V 9.5A 8ECH

Manufacturer: ON Semiconductor
Win Source Part Number: 802501-ECH8309-TL-H
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 12V
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Temperature Range - Operating: 150°C
Manufacturer Package: 8-SMD, Flat Lead
Power Dissipation (Maximum): 1.5W
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 16mOhm at 4.5A, 4.5V
Gate Charge (Qg) (Maximum) at Vgs: 18nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 1780pF at 6V
Current - Continuous Drain (Id) at 25°C: 9.5A
Maximum Vgs: ±10V