The DTD113E is an NPN silicon digital transistor with integrated bias resistors, housed in a TO-92 package. It has a maximum collector-emitter voltage of 50 Vdc and a collector current rating of 100 mAdc. Power dissipation is 350 mW at 25°C, with a thermal resistance of 357 °C/W. The DC current gain ranges from 3.0 to 5.0 at IC = 5 mA and VCE = 10 V. The input resistor R1 is 1.0 kΩ, and R2 is 1.0 kΩ, yielding a resistor ratio of 0.8 to 1.2. The collector-emitter saturation voltage is 0.25 Vmax at IC = 10 mA and IB = 0.3 mA. The base-emitter cutoff current is 4.3 mA at VEB = 6.0 V.
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN Product overview: DTD113E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100mA, 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 100mA, 50V, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-DTD113E can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 292-DTD113E |
| Product Name | 100mA 50V Bipolar Transistor |
