The DTA114EET1 is a PNP silicon surface mount transistor with an integrated monolithic bias resistor network, designed to replace a transistor and discrete resistor network, reducing component count and board space. It is housed in the SC-75/SOT-416 package, measuring 1.60 mm x 0.80 mm x 0.90 mm. The device has a collector-base voltage rating of 50 V, collector-emitter voltage of 50 V, and maximum collector current of 100 mA. It operates with a total device dissipation of 200 mW on a minimum FR-4 pad, derating at 1.6 mW/°C above 25°C, and a junction-to-ambient thermal resistance of 600 °C/W. The series is AEC-Q101 qualified and Pb-free compliant. The input resistor R1 is specified at 10 kΩ with a tolerance of 7.0 to 13 kΩ, and the resistor ratio R1/R2 is not defined for this variant. Junction and storage temperature range is -55°C to +150°C.
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
| Rochester Electronics | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | DTA114EET1 |
| Polarity | PNP |