onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - CPH3351-TL-W CPH3351-TL-W

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1030143-CPH3351-TL-W Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 3-CPH Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 1.8A (Ta) Gate-Source Threshold Voltage: 2.6V @ 1mA Max Gate Charge: 6nC @ 10V Max Input Capacitance: 262pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 250 mOhm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1030143-CPH3351-TL-W Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 3-CPH Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 1.8A (Ta) Gate-Source Threshold Voltage: 2.6V @ 1mA Max Gate Charge: 6nC @ 10V Max Input Capacitance: 262pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 250 mOhm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CPH3351-TL-W - 1030143-CPH3351-TL-W - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CPH3351-TL-W
1030143-CPH3351-TL-W
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CPH3351-TL-W 1030143-CPH3351-TL-W
Manufacturer: ON Semiconductor Win Source Part Number: 1030143-CPH3351-TL-W Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 3-CPH Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 1.8A (Ta) Gate-Source Threshold Voltage: 2.6V @ 1mA Max Gate Charge: 6nC @ 10V Max Input Capacitance: 262pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 250 mOhm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1030143-CPH3351-TL-W
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 3-CPH
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 1.8A (Ta)
Gate-Source Threshold Voltage: 2.6V @ 1mA
Max Gate Charge: 6nC @ 10V
Max Input Capacitance: 262pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 250 mOhm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - CPH3351-TL-W - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
CPH3351-TL-W
Single FETs, MOSFETs CPH3351-TL-W
MOSFET P-CH 60V 1.8A 3CPH

MOSFET P-CH 60V 1.8A 3CPH

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CPH3351-TL-W - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CPH3351-TL-W
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CPH3351-TL-W
MOSFET P-CH 60V 1.8A 3CPH

MOSFET P-CH 60V 1.8A 3CPH

Supplier's Site
Sheung Wan, Hong Kong
MOSFET PCH 1.8A 60V 4V DRIV

MOSFET PCH 1.8A 60V 4V DRIV

Buy Now Datasheet
Mosfet, P-Ch, -60V, -1.8A, Sot-23; Channel Type Onsemi - 13AC6093 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -60V, -1.8A, Sot-23; Channel Type Onsemi
13AC6093
Mosfet, P-Ch, -60V, -1.8A, Sot-23; Channel Type Onsemi 13AC6093
MOSFET, P-CH, -60V, -1.8A, SOT-23; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.6V; MSL:- RoHS Compliant: Yes

MOSFET, P-CH, -60V, -1.8A, SOT-23; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.6V; MSL:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1030143-CPH3351-TL-W CPH3351-TL-W CPH3351-TL-W CPH3351-TL-W 13AC6093
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - CPH3351-TL-W Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, P-Ch, -60V, -1.8A, Sot-23; Channel Type Onsemi
Polarity P-Channel; P-Channel P-Channel; P-Channel
V(BR)DSS 60 volts 60 volts
PD 1000 milliwatts 1000 milliwatts
TJ 150 C (302 F) 150 C (302 F)
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