Single P-Channel Power MOSFET -12V, -3A, 70mΩ, CPH3, 3000-REEL Product overview: CPH3348-TL-E from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -12V, -3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -12V, -3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CPH3348-TL-E can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 1030141-CPH3348-TL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 3-CPH
Dimension: SC-96
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 3A (Ta)
Max Gate Charge: 5.6nC @ 4.5V
Max Input Capacitance: 405pF @ 6V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 70 mOhm @ 1.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Sufficient
MOSFET P-CH 12V 3A 3CPH
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-CPH3348-TL-E | 1030141-CPH3348-TL-E | CPH3348-TL-E |
| Product Name | P-Channel -12V -3A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CPH3348-TL-E | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 1000 milliwatts | 1000 milliwatts | |
| TJ | -55 C (-67 F) | 150 C (302 F) | |
| Polarity | P-Channel; P-Channel |