onsemi CPH3308-TL-E

P-Channel Silicon MOSFET for ultrahigh-speed switching applications, packaged in a CPH3 case with dimensions of 6.0 mm × 2.9 mm × 2.0 mm. It has a drain-to-source voltage rating of -30 V, a continuous drain current of -4 A, and a pulse drain current of -16 A. The device supports 4 V gate drive and has a typical on-state resistance of 72 mΩ at -10 V gate drive and -2 A drain current. Total gate charge is 12 nC, with turn-on and turn-off delays of 17 ns and 66 ns respectively. It meets an operating channel temperature of 150°C and storage temperature range of -55°C to +150°C. Maximum allowable power dissipation is 1.2 W when mounted on a ceramic board. The part is rated for operation under standard semiconductor reliability conditions, though no specific qualification standards like AEC-Q200 are cited.