onsemi Single Bipolar Transistors CPH3109-TL-E

Description
Bipolar (BJT) Transistor PNP 30V 3A 380MHz 900mW Surface Mount 3-CPH
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP 30V 3A 380MHz 900mW Surface Mount 3-CPH
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single Bipolar Transistors - CPH3109-TL-EOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
CPH3109-TL-EOSTR-ND
Single Bipolar Transistors CPH3109-TL-EOSTR-ND
Bipolar (BJT) Transistor PNP 30V 3A 380MHz 900mW Surface Mount 3-CPH

Bipolar (BJT) Transistor PNP 30V 3A 380MHz 900mW Surface Mount 3-CPH

Buy Now Datasheet
Single Bipolar Transistors - CPH3109-TL-EOSCT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
CPH3109-TL-EOSCT-ND
Single Bipolar Transistors CPH3109-TL-EOSCT-ND
Bipolar (BJT) Transistor PNP 30V 3A 380MHz 900mW Surface Mount 3-CPH

Bipolar (BJT) Transistor PNP 30V 3A 380MHz 900mW Surface Mount 3-CPH

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - CPH3109-TL-E - 202748-CPH3109-TL-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - CPH3109-TL-E
202748-CPH3109-TL-E
TRANSISTORS - Transistors (BJT) - Single - CPH3109-TL-E 202748-CPH3109-TL-E
Manufacturer: ON Semiconductor Win Source Part Number: 202748-CPH3109-TL-E Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 380MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 3-CPH Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 230mV @ 30mA, 1.5A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 200 @ 500mA, 2V Maximum Power Dissipation: 900mW Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 202748-CPH3109-TL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 380MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 3-CPH
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Max Vce (sat): 230mV @ 30mA, 1.5A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 200 @ 500mA, 2V
Maximum Power Dissipation: 900mW
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - CPH3109-TL-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
CPH3109-TL-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) CPH3109-TL-E
TRANS PNP 30V 3A 3CPH

TRANS PNP 30V 3A 3CPH

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CPH3109-TL-E
Bipolar Transistors - BJT CPH3109-TL-E
Bipolar Transistors - BJT BIP PNP 3A 30V

Bipolar Transistors - BJT BIP PNP 3A 30V

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number CPH3109-TL-EOSTR-ND 202748-CPH3109-TL-E CPH3109-TL-E CPH3109-TL-E
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - CPH3109-TL-E Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity PNP PNP; PNP
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