onsemi DIP Bipolar Transistor CNY17F4TVM

Description
6-Pin DIP High BVCEO Phototransistor Output Optocoupler, 1000-BLKBG Product overview: CNY17F4TVM from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include DIP. Search-friendly keywords include transistor, BJT, switching, amplification, DIP, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-CNY17F4TVM can be used for catalog matching and distributor lookup.
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Description
6-Pin DIP High BVCEO Phototransistor Output Optocoupler, 1000-BLKBG Product overview: CNY17F4TVM from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include DIP. Search-friendly keywords include transistor, BJT, switching, amplification, DIP, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-CNY17F4TVM can be used for catalog matching and distributor lookup.
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Datasheet
Datasheet Summary
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The CNY17F4TVM is a 6-pin DIP optocoupler comprising an infrared LED coupled to an NPN phototransistor, designed for electrical isolation in applications such as power supply regulation and microprocessor interfacing. It features a minimumcollector-emitter breakdown voltage of 70 V, maximum working insulation voltage of 850 Vpeak, and isolation capacitance of 0.2 pF. The device meets UL1577 and DIN-EN/IEC60747-5-5 safety standards with 4,170 VAC RMS isolation for 1 minute and a creepage and clearance of ≥7 mm. Current transfer ratio ranges from 160% to 320% at IF = 10 mA and VCE = 5 V. The package conforms to PDIP-6 dimensions of 8.51 mm × 6.35 mm with 2.54 mm pin pitch. The device operates from −40°C to +100°C and complies with RoHS standards. The 'TVM' suffix indicates 0.4" lead spacing and DIN EN/IEC60747-5-5 option, consistent with the CNY17FXM series.

Datasheet Summary
Powered by GS/AI

The CNY17F4TVM is a 6-pin DIP optocoupler comprising an infrared LED coupled to an NPN phototransistor, designed for electrical isolation in applications such as power supply regulation and microprocessor interfacing. It features a minimumcollector-emitter breakdown voltage of 70 V, maximum working insulation voltage of 850 Vpeak, and isolation capacitance of 0.2 pF. The device meets UL1577 and DIN-EN/IEC60747-5-5 safety standards with 4,170 VAC RMS isolation for 1 minute and a creepage and clearance of ≥7 mm. Current transfer ratio ranges from 160% to 320% at IF = 10 mA and VCE = 5 V. The package conforms to PDIP-6 dimensions of 8.51 mm × 6.35 mm with 2.54 mm pin pitch. The device operates from −40°C to +100°C and complies with RoHS standards. The 'TVM' suffix indicates 0.4" lead spacing and DIN EN/IEC60747-5-5 option, consistent with the CNY17FXM series.

Suppliers

Company
Product
Description
Supplier Links
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
DIP Bipolar Transistor
903-CNY17F4TVM
DIP Bipolar Transistor 903-CNY17F4TVM
6-Pin DIP High BVCEO Phototransistor Output Optocoupler, 1000-BLKBG Product overview: CNY17F4TVM from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include DIP. Search-friendly keywords include transistor, BJT, switching, amplification, DIP, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-CNY17F4TVM can be used for catalog matching and distributor lookup.

6-Pin DIP High BVCEO Phototransistor Output Optocoupler, 1000-BLKBG Product overview: CNY17F4TVM from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include DIP. Search-friendly keywords include transistor, BJT, switching, amplification, DIP, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-CNY17F4TVM can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD.
Product Category Bipolar RF Transistors
Product Number 903-CNY17F4TVM
Product Name DIP Bipolar Transistor
IC(max) 50 milliamps
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