The CNY17F4M is a 6-pin DIP optocoupler consisting of a gallium arsenide infrared LED coupled to an NPN phototransistor, designed for signal isolation in power supply regulators, digital logic inputs, and industrial controls. It features a collector-emitter breakdown voltage of 70 V minimum, a current transfer ratio of 160-320% at IF = 10 mA and VCE = 5 V, and complies with UL1577 (4,170 VAC RMS for 1 minute) and DIN-EN/IEC60747-5-5 (850 V peak working insulation voltage). The device has an external creepage and clearance of at least 7 mm, a distance through insulation of at least 0.5 mm, and operates from −40°C to +100°C ambient temperature. The package measures 8.51 mm × 6.35 mm with a 2.54 mm pin pitch.
400V Phototransistor Optocoupler, 7.5kV Isolation, DIP Product overview: CNY17F4M from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 400V, 7.5kV, DIP. Search-friendly keywords include transistor, BJT, switching, amplification, 400V, 7.5kV, DIP, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-CNY17F4M can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-CNY17F4M |
| Product Name | 400V 7.5kV DIP Bipolar Transistor |
| IC(max) | 50 milliamps |
