The CNY173300W is a phototransistor optocoupler in a black package with VDE approval, consisting of a gallium arsenide infrared emitter and an NPN phototransistor in a 6-pin dual in-line package. It has a collector-emitter breakdown voltage of 70 V minimum, a current transfer ratio range of 100-200% at 10 mA forward current and 5 V collector-emitter voltage, and an isolation voltage of 5300 Vrms for one minute. The device meets UL and VDE safety standards, with an isolation resistance of 10^11 Ω and an isolation capacitance of 0.5 pF. Operating temperature ranges from -55°C to +100°C, with a maximum power dissipation of 250 mW.
Transistor Output Optocouplers Optocoupler Hi Bvceo Phototransistor Product overview: CNY173300W from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-CNY173300W can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-CNY173300W |
| Product Name | Bipolar Transistor |
| PD | 260 milliwatts |
