The CNY171SM is a 6-pin DIP optocoupler consisting of a gallium arsenide infrared emitter coupled to an NPN phototransistor, designed for electrical isolation in power supply regulators, microprocessor inputs, and industrial controls. It features a minimum collector-emitter breakdown voltage of 70 V, an isolation voltage of 4,170 VAC RMS for 1 minute, and a maximum working insulation voltage of 850 Vpeak. The device complies with UL1577 and DIN-EN/IEC60747-5-5 safety standards, with an external creepage and clearance of at least 7 mm and a distance through insulation of at least 0.5 mm. The package is a surface-mount 6-pin design with lead bend, sized to 8.51 × 6.35 mm with 2.54 mm pitch.
6-Pin DIP High BVCEO Phototransistor Output Optocoupler, 1000-BLKBG Product overview: CNY171SM from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include DIP. Search-friendly keywords include transistor, BJT, switching, amplification, DIP, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-CNY171SM can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-CNY171SM |
| Product Name | DIP Bipolar Transistor |
| PD | 0.1500 milliwatts |
