onsemi Memory CAT28LV256G25

Description
EEPROM Memory IC 256Kb (32K x 8) Parallel 250ns 32-PLCC (11.43x13.97)
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Description
EEPROM Memory IC 256Kb (32K x 8) Parallel 250ns 32-PLCC (11.43x13.97)
Request a Quote
Datasheet
Datasheet Summary
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The CAT28LV256G25 is a 256K-bit CMOS parallel EEPROM memory device organized as 32K x 8 bits. It operates with a supply voltage range of 3.0V to 3.6V and offers read access times of 200, 250, or 300 ns. The device features low power consumption, with a maximum active current of 15 mA and standby current of 150 µA. It supports a simple write operation with on-chip address and data latches, and includes a self-timed write cycle with an auto-clear function, achieving a maximum write cycle time of 10 ms. The CAT28LV256G25 is designed for a wide range of applications, available in commercial, industrial, and automotive temperature ranges. It supports automatic page write operations for 1 to 64 bytes in 10 ms and includes data polling and toggle status bits for write cycle detection. The device is rated for 100,000 program/erase cycles and offers data retention of up to 100 years. It is available in multiple package types, including 28-pin DIP, 28-pin TSOP, and 32-pin PLCC.

Datasheet Summary
Powered by GS/AI

The CAT28LV256G25 is a 256K-bit CMOS parallel EEPROM memory device organized as 32K x 8 bits. It operates with a supply voltage range of 3.0V to 3.6V and offers read access times of 200, 250, or 300 ns. The device features low power consumption, with a maximum active current of 15 mA and standby current of 150 µA. It supports a simple write operation with on-chip address and data latches, and includes a self-timed write cycle with an auto-clear function, achieving a maximum write cycle time of 10 ms. The CAT28LV256G25 is designed for a wide range of applications, available in commercial, industrial, and automotive temperature ranges. It supports automatic page write operations for 1 to 64 bytes in 10 ms and includes data polling and toggle status bits for write cycle detection. The device is rated for 100,000 program/erase cycles and offers data retention of up to 100 years. It is available in multiple package types, including 28-pin DIP, 28-pin TSOP, and 32-pin PLCC.

Suppliers

Company
Product
Description
Supplier Links
Memory - CAT28LV256G25-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 256Kb (32K x 8) Parallel 250ns 32-PLCC (11.43x13.97)

EEPROM Memory IC 256Kb (32K x 8) Parallel 250ns 32-PLCC (11.43x13.97)

Buy Now Datasheet
Memory - CAT28LV256G25 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 256Kbit Parallel 250 ns 32-PLCC (11.43x13.97)

EEPROM Memory IC 256Kbit Parallel 250 ns 32-PLCC (11.43x13.97)

Buy Now Datasheet
Memory - CAT28LV256G25 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 256Kbit Parallel 250 ns 32-PLCC (13.97x11.43)

EEPROM Memory IC 256Kbit Parallel 250 ns 32-PLCC (13.97x11.43)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - CAT28LV256G25 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
CAT28LV256G25
Integrated Circuits (ICs) - Memory CAT28LV256G25
IC EEPROM 256KBIT PAR 32PLCC

IC EEPROM 256KBIT PAR 32PLCC

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number CAT28LV256G25-ND CAT28LV256G25 CAT28LV256G25
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category EEPROM EEPROM; EEPROM EEPROM; Non-Volatile
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Package Type 32-LCC (J-Lead) 32-LCC (J-Lead)
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