onsemi Memory - CAT28F010H-12T CAT28F010H-12T

The CAT28F010H-12T is a 1 Megabit CMOS Flash Memory device from Quarktwin Technology Ltd., designed for applications requiring fast read access and in-system code updates. It features a read access time of 120 ns and low power consumption, with a maximum active current of 30 mA and standby currents of 1 mA (TTL levels) and 100 µA (CMOS levels). The device supports high-speed programming at 10 µs per byte and offers a typical chip program time of 2 seconds, with a chip erase time of approximately 0.5 seconds. Manufactured using advanced CMOS floating gate technology, the CAT28F010H-12T is rated for 100,000 program/erase cycles and has a data retention period of 10 years. It is compatible with standard EPROM and EEPROM devices, making it suitable for various applications. The memory is available in multiple package types, including 32-pin plastic DIP, PLCC, and TSOP, adhering to JEDEC standards. This product is suitable for commercial, industrial, and automotive temperature ranges, providing flexibility for different project requirements.