onsemi Memory CAT28F001L-90B

The CAT28F001L-90B is a 1 Megabit CMOS Flash memory device featuring a fast read access time of 90 ns. It utilizes a blocked architecture that includes one 8 KB boot block, two 4 KB parameter blocks, and one 112 KB main block, allowing for efficient data management and secure code storage. The boot block can be positioned at either the top or bottom of the memory map and includes a write lock-out feature to ensure data integrity. This memory device operates at a programming and erase voltage of 12.0V ± 5% and supports automated programming and erase algorithms, making it suitable for applications requiring in-system updates. It is designed for low power consumption and is available in various temperature ranges, including commercial, industrial, and automotive. The CAT28F001L-90B is capable of enduring 100,000 program/erase cycles with a data retention period of up to 10 years. It is offered in JEDEC standard pinouts, including 32-pin DIP, PLCC, and TSOP packages, providing flexibility for integration into different designs.